Determination of the variation in sputter yield in the SIMS transient region using MEIS

M. G. Dowsett*, T. J. Ormsby, F. S. Gard, S. H. Al-Harthi, B. Guzmán, C. F. McConville, T. C.Q. Noakes, P. Bailey

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


The near-surface erosion rate in SIMS depth profiling is significantly different from that in the bulk, and varies with primary ion dose across the transient region in a currently unknown manner. Here, we describe a new method using medium energy ion scattering to measure the transient matrix sputter yield, and hence determine the erosion rate. We demonstrate its use in converting the raw dose and yield scales in a shallow depth profile to depth and concentration. We show that the surface erosion rate may be more than 10 times that in the bulk, and that the ion yield for boron in silicon apparently stabilizes before the sputter yield.

Original languageEnglish
Pages (from-to)363-366
Number of pages4
JournalApplied Surface Science
Publication statusPublished - Jan 15 2003
Externally publishedYes


  • Depth calibration
  • Erosion rate
  • Transient region
  • Ultra-low energy SIMS
  • Ultra-shallow junction

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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