Determination of the variation in sputter yield in the SIMS transient region using MEIS

M. G. Dowsett; T. J. Ormsby; F. S. Gard; S. H. Al-Harthi; B. Guzmán; C. F. McConville; T. C.Q. Noakes; P. Bailey

doi:10.1016/S0169-4332(02)00879-6

Determination of the variation in sputter yield in the SIMS transient region using MEIS

M. G. Dowsett^*, T. J. Ormsby, F. S. Gard, S. H. Al-Harthi, B. Guzmán, C. F. McConville, T. C.Q. Noakes, P. Bailey

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The near-surface erosion rate in SIMS depth profiling is significantly different from that in the bulk, and varies with primary ion dose across the transient region in a currently unknown manner. Here, we describe a new method using medium energy ion scattering to measure the transient matrix sputter yield, and hence determine the erosion rate. We demonstrate its use in converting the raw dose and yield scales in a shallow depth profile to depth and concentration. We show that the surface erosion rate may be more than 10 times that in the bulk, and that the ion yield for boron in silicon apparently stabilizes before the sputter yield.

Original language	English
Pages (from-to)	363-366
Number of pages	4
Journal	Applied Surface Science
Volume	203-204
DOIs	https://doi.org/10.1016/S0169-4332(02)00879-6
Publication status	Published - Jan 15 2003
Externally published	Yes

Keywords

Depth calibration
Erosion rate
Transient region
Ultra-low energy SIMS
Ultra-shallow junction

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(02)00879-6

Cite this

@article{5354a4e19c1144aba2e738405de697dd,

title = "Determination of the variation in sputter yield in the SIMS transient region using MEIS",

abstract = "The near-surface erosion rate in SIMS depth profiling is significantly different from that in the bulk, and varies with primary ion dose across the transient region in a currently unknown manner. Here, we describe a new method using medium energy ion scattering to measure the transient matrix sputter yield, and hence determine the erosion rate. We demonstrate its use in converting the raw dose and yield scales in a shallow depth profile to depth and concentration. We show that the surface erosion rate may be more than 10 times that in the bulk, and that the ion yield for boron in silicon apparently stabilizes before the sputter yield.",

keywords = "Depth calibration, Erosion rate, Transient region, Ultra-low energy SIMS, Ultra-shallow junction",

author = "Dowsett, {M. G.} and Ormsby, {T. J.} and Gard, {F. S.} and Al-Harthi, {S. H.} and B. Guzm{\'a}n and McConville, {C. F.} and Noakes, {T. C.Q.} and P. Bailey",

note = "Funding Information: Thanks are due to Applied Implant Technology Ltd., UK, for the pre-amorphized implants, E.H.C. Parker{\textquoteright}s group at Warwick for the capping; the UK EPSRC, Atomika Instruments GmbH and the Omani Government for funding.",

year = "2003",

month = jan,

day = "15",

doi = "10.1016/S0169-4332(02)00879-6",

language = "English",

volume = "203-204",

pages = "363--366",

journal = "Applied Surface Science",

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publisher = "Elsevier",

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TY - JOUR

T1 - Determination of the variation in sputter yield in the SIMS transient region using MEIS

AU - Dowsett, M. G.

AU - Ormsby, T. J.

AU - Gard, F. S.

AU - Al-Harthi, S. H.

AU - Guzmán, B.

AU - McConville, C. F.

AU - Noakes, T. C.Q.

AU - Bailey, P.

N1 - Funding Information: Thanks are due to Applied Implant Technology Ltd., UK, for the pre-amorphized implants, E.H.C. Parker’s group at Warwick for the capping; the UK EPSRC, Atomika Instruments GmbH and the Omani Government for funding.

PY - 2003/1/15

Y1 - 2003/1/15

N2 - The near-surface erosion rate in SIMS depth profiling is significantly different from that in the bulk, and varies with primary ion dose across the transient region in a currently unknown manner. Here, we describe a new method using medium energy ion scattering to measure the transient matrix sputter yield, and hence determine the erosion rate. We demonstrate its use in converting the raw dose and yield scales in a shallow depth profile to depth and concentration. We show that the surface erosion rate may be more than 10 times that in the bulk, and that the ion yield for boron in silicon apparently stabilizes before the sputter yield.

AB - The near-surface erosion rate in SIMS depth profiling is significantly different from that in the bulk, and varies with primary ion dose across the transient region in a currently unknown manner. Here, we describe a new method using medium energy ion scattering to measure the transient matrix sputter yield, and hence determine the erosion rate. We demonstrate its use in converting the raw dose and yield scales in a shallow depth profile to depth and concentration. We show that the surface erosion rate may be more than 10 times that in the bulk, and that the ion yield for boron in silicon apparently stabilizes before the sputter yield.

KW - Depth calibration

KW - Erosion rate

KW - Transient region

KW - Ultra-low energy SIMS

KW - Ultra-shallow junction

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U2 - 10.1016/S0169-4332(02)00879-6

DO - 10.1016/S0169-4332(02)00879-6

M3 - Article

AN - SCOPUS:12244255051

SN - 0169-4332

VL - 203-204

SP - 363

EP - 366

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Determination of the variation in sputter yield in the SIMS transient region using MEIS

Abstract

Keywords

ASJC Scopus subject areas

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