Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency

Muhammad Usman*, Tariq Jamil, Shahzeb Malik, Habibullah Jamal

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We have proposed and investigated a DUV LED device with anti-trapezoidal quaternary electron blocking layer (EBL) numerically. The simulation results show that the anti-trapezoidal quaternary EBL is a better approach for diminishing the electron overflow and boosting the hole into the active region. This improves radiative recombination, which is responsible for the significant enhancement in IQE and remarkable reduction in efficiency droop. The results reveal that the electron and hole concentration is increased by 19 % and 29 % respectively.

Original languageEnglish
Article number166528
Publication statusPublished - Apr 2021
Externally publishedYes


  • Deep ultraviolet LED
  • Efficiency
  • Quaternary

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this