Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency

Muhammad Usman; Tariq Jamil; Shahzeb Malik; Habibullah Jamal

doi:10.1016/j.ijleo.2021.166528

Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency

Muhammad Usman^*, Tariq Jamil, Shahzeb Malik, Habibullah Jamal

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We have proposed and investigated a DUV LED device with anti-trapezoidal quaternary electron blocking layer (EBL) numerically. The simulation results show that the anti-trapezoidal quaternary EBL is a better approach for diminishing the electron overflow and boosting the hole into the active region. This improves radiative recombination, which is responsible for the significant enhancement in IQE and remarkable reduction in efficiency droop. The results reveal that the electron and hole concentration is increased by 19 % and 29 % respectively.

Original language	English
Article number	166528
Journal	Optik
Volume	232
DOIs	https://doi.org/10.1016/j.ijleo.2021.166528
Publication status	Published - Apr 2021
Externally published	Yes

Keywords

Deep ultraviolet LED
Efficiency
Quaternary

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1016/j.ijleo.2021.166528

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title = "Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency",

abstract = "We have proposed and investigated a DUV LED device with anti-trapezoidal quaternary electron blocking layer (EBL) numerically. The simulation results show that the anti-trapezoidal quaternary EBL is a better approach for diminishing the electron overflow and boosting the hole into the active region. This improves radiative recombination, which is responsible for the significant enhancement in IQE and remarkable reduction in efficiency droop. The results reveal that the electron and hole concentration is increased by 19 % and 29 % respectively.",

keywords = "Deep ultraviolet LED, Efficiency, Quaternary",

author = "Muhammad Usman and Tariq Jamil and Shahzeb Malik and Habibullah Jamal",

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year = "2021",

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doi = "10.1016/j.ijleo.2021.166528",

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T1 - Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency

AU - Usman, Muhammad

AU - Jamil, Tariq

AU - Malik, Shahzeb

AU - Jamal, Habibullah

PY - 2021/4

Y1 - 2021/4

N2 - We have proposed and investigated a DUV LED device with anti-trapezoidal quaternary electron blocking layer (EBL) numerically. The simulation results show that the anti-trapezoidal quaternary EBL is a better approach for diminishing the electron overflow and boosting the hole into the active region. This improves radiative recombination, which is responsible for the significant enhancement in IQE and remarkable reduction in efficiency droop. The results reveal that the electron and hole concentration is increased by 19 % and 29 % respectively.

AB - We have proposed and investigated a DUV LED device with anti-trapezoidal quaternary electron blocking layer (EBL) numerically. The simulation results show that the anti-trapezoidal quaternary EBL is a better approach for diminishing the electron overflow and boosting the hole into the active region. This improves radiative recombination, which is responsible for the significant enhancement in IQE and remarkable reduction in efficiency droop. The results reveal that the electron and hole concentration is increased by 19 % and 29 % respectively.

KW - Deep ultraviolet LED

KW - Efficiency

KW - Quaternary

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JO - Optik

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M1 - 166528

ER -

Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency

Abstract

Keywords

ASJC Scopus subject areas

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