Design of ultra-fast dual-wavelength resonant-cavity-enhanced Schottky photodetectors

Hadj Bourdoucen; Joseph A. Jervase

doi:10.1109/3.892725

Design of ultra-fast dual-wavelength resonant-cavity-enhanced Schottky photodetectors

Hadj Bourdoucen, Joseph A. Jervase

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A systematic optimization procedure for the design of RCE Schottky photodetectors to achieve maximum quantum efficiency and high speed operation at 1.3 and 1.55 μm wavelengths is presented. The quantum efficiency formulation used includes the structural parameters of the photodetector and takes into account the wavelength dependence of the top and bottom mirrors reflectivities. The results have shown that the value of the thickness of the antireflection coating layer has a major influence in selecting the width of the photodetector to simultaneously achieve maximum quantum efficiency and high bandwidth at the two wavelengths. Simulated values of 270 and 40 GHz were obtained, respectively, for the 3-dB carrier-transit time-limited bandwidth and bandwidth-efficiency product for an RCE Schottky photodetector with a 0.02-μm gold layer.

Original language	English
Pages (from-to)	63-68
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	37
Issue number	1
DOIs	https://doi.org/10.1109/3.892725
Publication status	Published - Jan 2001

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "A systematic optimization procedure for the design of RCE Schottky photodetectors to achieve maximum quantum efficiency and high speed operation at 1.3 and 1.55 μm wavelengths is presented. The quantum efficiency formulation used includes the structural parameters of the photodetector and takes into account the wavelength dependence of the top and bottom mirrors reflectivities. The results have shown that the value of the thickness of the antireflection coating layer has a major influence in selecting the width of the photodetector to simultaneously achieve maximum quantum efficiency and high bandwidth at the two wavelengths. Simulated values of 270 and 40 GHz were obtained, respectively, for the 3-dB carrier-transit time-limited bandwidth and bandwidth-efficiency product for an RCE Schottky photodetector with a 0.02-μm gold layer.",

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AB - A systematic optimization procedure for the design of RCE Schottky photodetectors to achieve maximum quantum efficiency and high speed operation at 1.3 and 1.55 μm wavelengths is presented. The quantum efficiency formulation used includes the structural parameters of the photodetector and takes into account the wavelength dependence of the top and bottom mirrors reflectivities. The results have shown that the value of the thickness of the antireflection coating layer has a major influence in selecting the width of the photodetector to simultaneously achieve maximum quantum efficiency and high bandwidth at the two wavelengths. Simulated values of 270 and 40 GHz were obtained, respectively, for the 3-dB carrier-transit time-limited bandwidth and bandwidth-efficiency product for an RCE Schottky photodetector with a 0.02-μm gold layer.

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Design of ultra-fast dual-wavelength resonant-cavity-enhanced Schottky photodetectors

Abstract

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