Deep traps and temperature effects on the capacitance of p-type Si-doped GaAs Schottky diodes on (2 1 1) and (3 1 1) oriented GaAs substrates

R. Boumaraf, N. Sengouga*, R. H. Mari, Af Meftah, M. Aziz, Dler Jameel, Noor Al Saqri, D. Taylor, M. Henini

*Corresponding author for this work

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