Deep traps and temperature effects on the capacitance of p-type Si-doped GaAs Schottky diodes on (2 1 1) and (3 1 1) oriented GaAs substrates

R. Boumaraf, N. Sengouga, R. H. Mari, Af Meftah, M. Aziz, Dler Jameel, Noor Al Saqri, D. Taylor, M. Henini

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The SILVACO-TCAD numerical simulator is used to explain the effect of different types of deep levels on the temperature dependence of the capacitance of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates, namely (3 1 1)A and (2 1 1)A oriented GaAs substrates. For the (3 1 1)A diodes, the measured capacitance-temperature characteristics at different reverse biases show a large peak while the (2 1 1)A devices display a much smaller one. This peak is related to the presence of different types of deep levels in the two structures. These deep levels are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (3 1 1)A structure only majority deep levels (hole deep levels) were observed while both majority and minority deep levels were present in the (2 1 1)A diodes. The simulation software, which calculates the capacitance-voltage and the capacitance-temperature characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behavior of the capacitance-temperature properties. A further evidence to confirm that deep levels are responsible for the observed phenomenon is provided by a simulation of the capacitance-temperature characteristics as a function of the ac-signal frequency.

Original languageEnglish
Pages (from-to)319-331
Number of pages13
JournalSuperlattices and Microstructures
Volume65
DOIs
Publication statusPublished - Jan 2014

Fingerprint

Schottky diodes
Thermal effects
temperature effects
Diodes
Capacitance
capacitance
traps
Substrates
Temperature
Deep level transient spectroscopy
diodes
gallium arsenide
temperature
Simulators
Display devices
minorities
display devices
simulators
Electric potential
simulation

Keywords

  • Capacitance-temperature
  • Deep levels
  • High index GaAs
  • SILVACO simulation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Deep traps and temperature effects on the capacitance of p-type Si-doped GaAs Schottky diodes on (2 1 1) and (3 1 1) oriented GaAs substrates. / Boumaraf, R.; Sengouga, N.; Mari, R. H.; Meftah, Af; Aziz, M.; Jameel, Dler; Al Saqri, Noor; Taylor, D.; Henini, M.

In: Superlattices and Microstructures, Vol. 65, 01.2014, p. 319-331.

Research output: Contribution to journalArticle

Boumaraf, R. ; Sengouga, N. ; Mari, R. H. ; Meftah, Af ; Aziz, M. ; Jameel, Dler ; Al Saqri, Noor ; Taylor, D. ; Henini, M. / Deep traps and temperature effects on the capacitance of p-type Si-doped GaAs Schottky diodes on (2 1 1) and (3 1 1) oriented GaAs substrates. In: Superlattices and Microstructures. 2014 ; Vol. 65. pp. 319-331.
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