Deep-level transient spectroscopy study of the E center in n-Si and partially relaxed n- Si0.9 Ge0.1 alloy layers

M. Mamor*, M. Elzain, K. Bouziane, S. H. Al Harthi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Deep-level transient spectroscopy study of the E center in n-Si and partially relaxed n- Si0.9 Ge0.1 alloy layers'. Together they form a unique fingerprint.

Material Science

Physics