Deep-level transient spectroscopy study of the E center in n-Si and partially relaxed n- Si0.9 Ge0.1 alloy layers

M. Mamor, M. Elzain, K. Bouziane, S. H. Al Harthi

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Abstract

We have employed deep-level transient spectroscopy to investigate the electronic properties of defects introduced during high energy He-ion irradiation of epitaxially grown phosphorous-doped n-Si and partially relaxed n- Si0.9 Ge0.1. It is found that He-ion irradiation introduces two major defects in Si and Si0.9 Ge0.1. These have been attributed to a doubly negative charge state of the divacancy (V2 = -) and V-P pair (E center). The germanium dependence of the activation enthalpy (EH) for both (V2 = -) and V-P pair is found to be relatively minute with a small decrease and increase in the corresponding EH with respect to that of Si, respectively. Comparison was made with earlier reported results in phosphorous-doped fully strained n- Si1-x Gex and antimony-doped totally relaxed n- Si1-x Gex layers to directly assess the influence of strain relaxation on radiation-related deep levels in Si1-x Gex. It is shown that the energy level of the V-P pair in fully strained and partially relaxed Si1-x Gex lies closely to that reported for V-Sb in fully relaxed Si1-x Gex. This result indicates that the V-P level is independent of strain, suggesting that such defect is pinned to the conduction band. Moreover, our calculation using full-potential linearized augmented plane wave method shows nonpreferential site occupancy of the phosphorous relative to Ge atoms. This implies a chemical disorder in the vicinity of the V-P center which leads to a fluctuation of the ionization energy level of the E center. This fluctuation is associated with a distribution of the electron emission rate between the V-P level and the conduction band edge.

Original languageEnglish
Article number035213
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume77
Issue number3
DOIs
Publication statusPublished - Jan 30 2008

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Deep level transient spectroscopy
Ion bombardment
Conduction bands
Electron energy levels
Defects
Enthalpy
ion irradiation
spectroscopy
Germanium
Strain relaxation
Antimony
defects
conduction bands
Ionization potential
enthalpy
energy levels
Electron emission
Electronic properties
antimony
Chemical activation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

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title = "Deep-level transient spectroscopy study of the E center in n-Si and partially relaxed n- Si0.9 Ge0.1 alloy layers",
abstract = "We have employed deep-level transient spectroscopy to investigate the electronic properties of defects introduced during high energy He-ion irradiation of epitaxially grown phosphorous-doped n-Si and partially relaxed n- Si0.9 Ge0.1. It is found that He-ion irradiation introduces two major defects in Si and Si0.9 Ge0.1. These have been attributed to a doubly negative charge state of the divacancy (V2 = -) and V-P pair (E center). The germanium dependence of the activation enthalpy (EH) for both (V2 = -) and V-P pair is found to be relatively minute with a small decrease and increase in the corresponding EH with respect to that of Si, respectively. Comparison was made with earlier reported results in phosphorous-doped fully strained n- Si1-x Gex and antimony-doped totally relaxed n- Si1-x Gex layers to directly assess the influence of strain relaxation on radiation-related deep levels in Si1-x Gex. It is shown that the energy level of the V-P pair in fully strained and partially relaxed Si1-x Gex lies closely to that reported for V-Sb in fully relaxed Si1-x Gex. This result indicates that the V-P level is independent of strain, suggesting that such defect is pinned to the conduction band. Moreover, our calculation using full-potential linearized augmented plane wave method shows nonpreferential site occupancy of the phosphorous relative to Ge atoms. This implies a chemical disorder in the vicinity of the V-P center which leads to a fluctuation of the ionization energy level of the E center. This fluctuation is associated with a distribution of the electron emission rate between the V-P level and the conduction band edge.",
author = "M. Mamor and M. Elzain and K. Bouziane and {Al Harthi}, {S. H.}",
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T1 - Deep-level transient spectroscopy study of the E center in n-Si and partially relaxed n- Si0.9 Ge0.1 alloy layers

AU - Mamor, M.

AU - Elzain, M.

AU - Bouziane, K.

AU - Al Harthi, S. H.

PY - 2008/1/30

Y1 - 2008/1/30

N2 - We have employed deep-level transient spectroscopy to investigate the electronic properties of defects introduced during high energy He-ion irradiation of epitaxially grown phosphorous-doped n-Si and partially relaxed n- Si0.9 Ge0.1. It is found that He-ion irradiation introduces two major defects in Si and Si0.9 Ge0.1. These have been attributed to a doubly negative charge state of the divacancy (V2 = -) and V-P pair (E center). The germanium dependence of the activation enthalpy (EH) for both (V2 = -) and V-P pair is found to be relatively minute with a small decrease and increase in the corresponding EH with respect to that of Si, respectively. Comparison was made with earlier reported results in phosphorous-doped fully strained n- Si1-x Gex and antimony-doped totally relaxed n- Si1-x Gex layers to directly assess the influence of strain relaxation on radiation-related deep levels in Si1-x Gex. It is shown that the energy level of the V-P pair in fully strained and partially relaxed Si1-x Gex lies closely to that reported for V-Sb in fully relaxed Si1-x Gex. This result indicates that the V-P level is independent of strain, suggesting that such defect is pinned to the conduction band. Moreover, our calculation using full-potential linearized augmented plane wave method shows nonpreferential site occupancy of the phosphorous relative to Ge atoms. This implies a chemical disorder in the vicinity of the V-P center which leads to a fluctuation of the ionization energy level of the E center. This fluctuation is associated with a distribution of the electron emission rate between the V-P level and the conduction band edge.

AB - We have employed deep-level transient spectroscopy to investigate the electronic properties of defects introduced during high energy He-ion irradiation of epitaxially grown phosphorous-doped n-Si and partially relaxed n- Si0.9 Ge0.1. It is found that He-ion irradiation introduces two major defects in Si and Si0.9 Ge0.1. These have been attributed to a doubly negative charge state of the divacancy (V2 = -) and V-P pair (E center). The germanium dependence of the activation enthalpy (EH) for both (V2 = -) and V-P pair is found to be relatively minute with a small decrease and increase in the corresponding EH with respect to that of Si, respectively. Comparison was made with earlier reported results in phosphorous-doped fully strained n- Si1-x Gex and antimony-doped totally relaxed n- Si1-x Gex layers to directly assess the influence of strain relaxation on radiation-related deep levels in Si1-x Gex. It is shown that the energy level of the V-P pair in fully strained and partially relaxed Si1-x Gex lies closely to that reported for V-Sb in fully relaxed Si1-x Gex. This result indicates that the V-P level is independent of strain, suggesting that such defect is pinned to the conduction band. Moreover, our calculation using full-potential linearized augmented plane wave method shows nonpreferential site occupancy of the phosphorous relative to Ge atoms. This implies a chemical disorder in the vicinity of the V-P center which leads to a fluctuation of the ionization energy level of the E center. This fluctuation is associated with a distribution of the electron emission rate between the V-P level and the conduction band edge.

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