Correlation between photoluminescence intermittency of CdSe quantum dots and self-trapped states in dielectric media

Abey Issac, Christian Von Borczyskowski, Frank Cichos

Research output: Contribution to journalArticle

162 Citations (Scopus)

Abstract

We present evidence that the photoluminescence intermittency of CdSeZnS core/shell quantum dots is correlated with the dielectric environment surrounding the quantum dots. The statistics of dark state lifetimes in the intermittency is found to be related to the stabilization energy of charges in the local dielectric surrounding of the quantum dot. This supports the model of an ionized quantum dot in the dark state. Charges ejected from the quantum dot are suggested to be self-trapped in mid-bandgap states of the surrounding matrix due to atomic and electronic relaxation processes. These trap states are inherent to disordered materials and proposed to be a general source of power law intermittency of various types of emitters such as quantum dots and dye molecules.

Original languageEnglish
Article number161302
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number16
DOIs
Publication statusPublished - 2005

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intermittency
Semiconductor quantum dots
Photoluminescence
quantum dots
photoluminescence
Relaxation processes
emitters
Energy gap
Coloring Agents
Dyes
Stabilization
stabilization
dyes
Statistics
statistics
traps
life (durability)
Molecules
matrices
electronics

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Correlation between photoluminescence intermittency of CdSe quantum dots and self-trapped states in dielectric media. / Issac, Abey; Von Borczyskowski, Christian; Cichos, Frank.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 71, No. 16, 161302, 2005.

Research output: Contribution to journalArticle

@article{64a9bf17c7564ea29e4311438ffdfba3,
title = "Correlation between photoluminescence intermittency of CdSe quantum dots and self-trapped states in dielectric media",
abstract = "We present evidence that the photoluminescence intermittency of CdSeZnS core/shell quantum dots is correlated with the dielectric environment surrounding the quantum dots. The statistics of dark state lifetimes in the intermittency is found to be related to the stabilization energy of charges in the local dielectric surrounding of the quantum dot. This supports the model of an ionized quantum dot in the dark state. Charges ejected from the quantum dot are suggested to be self-trapped in mid-bandgap states of the surrounding matrix due to atomic and electronic relaxation processes. These trap states are inherent to disordered materials and proposed to be a general source of power law intermittency of various types of emitters such as quantum dots and dye molecules.",
author = "Abey Issac and {Von Borczyskowski}, Christian and Frank Cichos",
year = "2005",
doi = "10.1103/PhysRevB.71.161302",
language = "English",
volume = "71",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "16",

}

TY - JOUR

T1 - Correlation between photoluminescence intermittency of CdSe quantum dots and self-trapped states in dielectric media

AU - Issac, Abey

AU - Von Borczyskowski, Christian

AU - Cichos, Frank

PY - 2005

Y1 - 2005

N2 - We present evidence that the photoluminescence intermittency of CdSeZnS core/shell quantum dots is correlated with the dielectric environment surrounding the quantum dots. The statistics of dark state lifetimes in the intermittency is found to be related to the stabilization energy of charges in the local dielectric surrounding of the quantum dot. This supports the model of an ionized quantum dot in the dark state. Charges ejected from the quantum dot are suggested to be self-trapped in mid-bandgap states of the surrounding matrix due to atomic and electronic relaxation processes. These trap states are inherent to disordered materials and proposed to be a general source of power law intermittency of various types of emitters such as quantum dots and dye molecules.

AB - We present evidence that the photoluminescence intermittency of CdSeZnS core/shell quantum dots is correlated with the dielectric environment surrounding the quantum dots. The statistics of dark state lifetimes in the intermittency is found to be related to the stabilization energy of charges in the local dielectric surrounding of the quantum dot. This supports the model of an ionized quantum dot in the dark state. Charges ejected from the quantum dot are suggested to be self-trapped in mid-bandgap states of the surrounding matrix due to atomic and electronic relaxation processes. These trap states are inherent to disordered materials and proposed to be a general source of power law intermittency of various types of emitters such as quantum dots and dye molecules.

UR - http://www.scopus.com/inward/record.url?scp=28644439820&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28644439820&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.71.161302

DO - 10.1103/PhysRevB.71.161302

M3 - Article

VL - 71

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 16

M1 - 161302

ER -