Constricted nanowire with stabilized magnetic domain wall

R. Sbiaa, M. Al Bahri

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Domain wall (DW)-based magnetic memory offers the possibility for increasing the storage capacity. However, stability of DW remains the major drawback of this scheme. In this letter, we propose a stepped nanowire for pinning DW in a desirable position. From micromagnetic simulation, the proposed design applied to in-plane magnetic anisotropy materials shows that by adjusting the nanowire step size and its width it is possible to stabilize DW for a desirable current density range. In contrast, only a movement of DW could be seen for conventional nanowire. An extension to a multi-stepped nanowire could be used for multi-bit per cell magnetic memory.

Original languageEnglish
Pages (from-to)113-115
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume411
DOIs
Publication statusPublished - Aug 1 2016

Fingerprint

Magnetic domains
Domain walls
magnetic domains
Nanowires
domain wall
nanowires
magnetic storage
Data storage equipment
Magnetic anisotropy
Current density
adjusting
current density
anisotropy
cells
simulation

Keywords

  • Domain wall memory
  • Magnetic domain
  • Magnetization reversal
  • Micromagnetism

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Constricted nanowire with stabilized magnetic domain wall. / Sbiaa, R.; Al Bahri, M.

In: Journal of Magnetism and Magnetic Materials, Vol. 411, 01.08.2016, p. 113-115.

Research output: Contribution to journalArticle

@article{feb670a411ca4b49a8fbc778b66e1934,
title = "Constricted nanowire with stabilized magnetic domain wall",
abstract = "Domain wall (DW)-based magnetic memory offers the possibility for increasing the storage capacity. However, stability of DW remains the major drawback of this scheme. In this letter, we propose a stepped nanowire for pinning DW in a desirable position. From micromagnetic simulation, the proposed design applied to in-plane magnetic anisotropy materials shows that by adjusting the nanowire step size and its width it is possible to stabilize DW for a desirable current density range. In contrast, only a movement of DW could be seen for conventional nanowire. An extension to a multi-stepped nanowire could be used for multi-bit per cell magnetic memory.",
keywords = "Domain wall memory, Magnetic domain, Magnetization reversal, Micromagnetism",
author = "R. Sbiaa and {Al Bahri}, M.",
year = "2016",
month = "8",
day = "1",
doi = "10.1016/j.jmmm.2016.03.043",
language = "English",
volume = "411",
pages = "113--115",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",

}

TY - JOUR

T1 - Constricted nanowire with stabilized magnetic domain wall

AU - Sbiaa, R.

AU - Al Bahri, M.

PY - 2016/8/1

Y1 - 2016/8/1

N2 - Domain wall (DW)-based magnetic memory offers the possibility for increasing the storage capacity. However, stability of DW remains the major drawback of this scheme. In this letter, we propose a stepped nanowire for pinning DW in a desirable position. From micromagnetic simulation, the proposed design applied to in-plane magnetic anisotropy materials shows that by adjusting the nanowire step size and its width it is possible to stabilize DW for a desirable current density range. In contrast, only a movement of DW could be seen for conventional nanowire. An extension to a multi-stepped nanowire could be used for multi-bit per cell magnetic memory.

AB - Domain wall (DW)-based magnetic memory offers the possibility for increasing the storage capacity. However, stability of DW remains the major drawback of this scheme. In this letter, we propose a stepped nanowire for pinning DW in a desirable position. From micromagnetic simulation, the proposed design applied to in-plane magnetic anisotropy materials shows that by adjusting the nanowire step size and its width it is possible to stabilize DW for a desirable current density range. In contrast, only a movement of DW could be seen for conventional nanowire. An extension to a multi-stepped nanowire could be used for multi-bit per cell magnetic memory.

KW - Domain wall memory

KW - Magnetic domain

KW - Magnetization reversal

KW - Micromagnetism

UR - http://www.scopus.com/inward/record.url?scp=84961924313&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84961924313&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2016.03.043

DO - 10.1016/j.jmmm.2016.03.043

M3 - Article

VL - 411

SP - 113

EP - 115

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

ER -