Chemical Vapor Deposition Growth of Composite Silicon-Silica Nanowires from Silicon Monoxide Vapor

Tariq Mohiuddin, Majid S. Al-Ruqeishi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Si/SiO2 nanowires were synthesized directly by and on silicon substrate surface without the use of a metal catalyst. Since these nanowires grow directly from the silicon substrate, they do not need to be manipulated or aligned for subsequent applications. The obtained nanowires are amorphous with diameters ranging between 50 to 200 nm and few micrometers in length. Parameters like heating temperature, deposition time, and carrier gas flow-rate were found critical in determining the size, structure, growth yield and morphology of the obtained nanowires. FTIR absorption spectra showed high intensity Si–O asymmetric stretching mode and no absorption for Si-Si backbone vibration mode at 620 cm−1which indicates the non-crystalline nature of grown wires.

Original languageEnglish
JournalSilicon
DOIs
Publication statusAccepted/In press - Dec 18 2014

Fingerprint

Silicon
Silicon Dioxide
Nanowires
Chemical vapor deposition
Vapors
Silica
Composite materials
Substrates
Stretching
Flow of gases
Absorption spectra
Metals
Flow rate
Wire
Heating
Catalysts
silicon monoxide
Temperature

Keywords

  • Nanofabrication
  • Nanowires
  • Scanning electron microscopy
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Chemical Vapor Deposition Growth of Composite Silicon-Silica Nanowires from Silicon Monoxide Vapor. / Mohiuddin, Tariq; Al-Ruqeishi, Majid S.

In: Silicon, 18.12.2014.

Research output: Contribution to journalArticle

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AB - Si/SiO2 nanowires were synthesized directly by and on silicon substrate surface without the use of a metal catalyst. Since these nanowires grow directly from the silicon substrate, they do not need to be manipulated or aligned for subsequent applications. The obtained nanowires are amorphous with diameters ranging between 50 to 200 nm and few micrometers in length. Parameters like heating temperature, deposition time, and carrier gas flow-rate were found critical in determining the size, structure, growth yield and morphology of the obtained nanowires. FTIR absorption spectra showed high intensity Si–O asymmetric stretching mode and no absorption for Si-Si backbone vibration mode at 620 cm−1which indicates the non-crystalline nature of grown wires.

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