TY - JOUR
T1 - Chemical Vapor Deposition Growth of Composite Silicon-Silica Nanowires from Silicon Monoxide Vapor
AU - Mohiuddin, Tariq
AU - Al-Ruqeishi, Majid S.
N1 - Publisher Copyright:
© 2014, Springer Science+Business Media Dordrecht.
PY - 2016/4/1
Y1 - 2016/4/1
N2 - Si/SiO2 nanowires were synthesized directly by and on silicon substrate surface without the use of a metal catalyst. Since these nanowires grow directly from the silicon substrate, they do not need to be manipulated or aligned for subsequent applications. The obtained nanowires are amorphous with diameters ranging between 50 to 200 nm and few micrometers in length. Parameters like heating temperature, deposition time, and carrier gas flow-rate were found critical in determining the size, structure, growth yield and morphology of the obtained nanowires. FTIR absorption spectra showed high intensity Si–O asymmetric stretching mode and no absorption for Si-Si backbone vibration mode at 620 cm−1which indicates the non-crystalline nature of grown wires.
AB - Si/SiO2 nanowires were synthesized directly by and on silicon substrate surface without the use of a metal catalyst. Since these nanowires grow directly from the silicon substrate, they do not need to be manipulated or aligned for subsequent applications. The obtained nanowires are amorphous with diameters ranging between 50 to 200 nm and few micrometers in length. Parameters like heating temperature, deposition time, and carrier gas flow-rate were found critical in determining the size, structure, growth yield and morphology of the obtained nanowires. FTIR absorption spectra showed high intensity Si–O asymmetric stretching mode and no absorption for Si-Si backbone vibration mode at 620 cm−1which indicates the non-crystalline nature of grown wires.
KW - Nanofabrication
KW - Nanowires
KW - Scanning electron microscopy
KW - Silicon
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U2 - 10.1007/s12633-014-9224-0
DO - 10.1007/s12633-014-9224-0
M3 - Article
SN - 1876-990X
VL - 8
SP - 225
EP - 231
JO - Silicon
JF - Silicon
IS - 2
ER -