Characterization of plasma etching induced interface states at Tip-SiGe Schottky contacts

M. Mamor, A. Sellai

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The authors have used current-voltage (I-V) data measured over a wide temperature range (100-300 K) complemented by deep level transient spectroscopy (DLTS) for the assessment of the defects introduced in Si0.95 Ge0.05 by argon plasma sputter etching. From DLTS, defect concentration depth profiling was extracted and revealed that the main defect introduced during argon plasma sputtering is located very close to the surface. I-V-T analysis shows that the electrical characteristics deviated from the ideal case and indicate the presence of interface states, resulting from the plasma etching induced surface states at Ti Si0.95 Ge0.05 interface. The interface state density as well as its temperature dependence were obtained from forward bias I-V-T measurements by considering the bias dependence of effective barrier height e. It is found that interface states density is temperature dependent although weakly.

Original languageEnglish
Pages (from-to)705-709
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume26
Issue number4
DOIs
Publication statusPublished - 2008

Fingerprint

Plasma etching
Interface states
plasma etching
electric contacts
Deep level transient spectroscopy
Argon
Defects
argon plasma
Plasmas
defects
Depth profiling
Surface states
Temperature
Sputtering
Etching
spectroscopy
sputtering
Electric potential
temperature dependence
temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

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abstract = "The authors have used current-voltage (I-V) data measured over a wide temperature range (100-300 K) complemented by deep level transient spectroscopy (DLTS) for the assessment of the defects introduced in Si0.95 Ge0.05 by argon plasma sputter etching. From DLTS, defect concentration depth profiling was extracted and revealed that the main defect introduced during argon plasma sputtering is located very close to the surface. I-V-T analysis shows that the electrical characteristics deviated from the ideal case and indicate the presence of interface states, resulting from the plasma etching induced surface states at Ti Si0.95 Ge0.05 interface. The interface state density as well as its temperature dependence were obtained from forward bias I-V-T measurements by considering the bias dependence of effective barrier height e. It is found that interface states density is temperature dependent although weakly.",
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