Abstract
We have used, in this contribution, the measured frequency-dependent ac admittance of irradiated Pd/n-GaN Schottky contacts at different temperatures ranging from 100K to 300K to derive the admittance associated with the displacement current in the Pd/GaN interfacial layer. The normalized conductance versus frequency plots at various temperatures, are characterized essentially by the presence of peaks, which is seen as a signature and a direct evidence for the presence of interface traps. The magnitudes and frequency positions of these peaks allowed the determination of the density and the energy distribution of interface traps as well as the thermal emission rates of carriers from traps and, hence, their capture cross-section.
Original language | English |
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Title of host publication | Proceedings of the Mediterranean Electrotechnical Conference - MELECON |
Pages | 622-625 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 2012 |
Event | 2012 16th IEEE Mediterranean Electrotechnical Conference, MELECON 2012 - Yasmine Hammamet, Tunisia Duration: Mar 25 2012 → Mar 28 2012 |
Other
Other | 2012 16th IEEE Mediterranean Electrotechnical Conference, MELECON 2012 |
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Country | Tunisia |
City | Yasmine Hammamet |
Period | 3/25/12 → 3/28/12 |
Keywords
- Admittance spectroscopy
- Interface States
- Schottky Contacts
ASJC Scopus subject areas
- Electrical and Electronic Engineering