Abstract
We have used, in this contribution, the measured frequency-dependent ac admittance of irradiated Pd/n-GaN Schottky contacts at different temperatures ranging from 100K to 300K to derive the admittance associated with the displacement current in the Pd/GaN interfacial layer. The normalized conductance versus frequency plots at various temperatures, are characterized essentially by the presence of peaks, which is seen as a signature and a direct evidence for the presence of interface traps. The magnitudes and frequency positions of these peaks allowed the determination of the density and the energy distribution of interface traps as well as the thermal emission rates of carriers from traps and, hence, their capture cross-section.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the Mediterranean Electrotechnical Conference - MELECON |
| Pages | 622-625 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2012 |
| Event | 2012 16th IEEE Mediterranean Electrotechnical Conference, MELECON 2012 - Yasmine Hammamet, Tunisia Duration: Mar 25 2012 → Mar 28 2012 |
Other
| Other | 2012 16th IEEE Mediterranean Electrotechnical Conference, MELECON 2012 |
|---|---|
| Country | Tunisia |
| City | Yasmine Hammamet |
| Period | 3/25/12 → 3/28/12 |
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Keywords
- Admittance spectroscopy
- Interface States
- Schottky Contacts
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Characteristics of interface states in irradiated Pd/n-SiGe as derived from frequency- and temperature-dependent admittance. / Sellai, A.; Mamor, M.
Proceedings of the Mediterranean Electrotechnical Conference - MELECON. 2012. p. 622-625 6196508.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Characteristics of interface states in irradiated Pd/n-SiGe as derived from frequency- and temperature-dependent admittance
AU - Sellai, A.
AU - Mamor, M.
PY - 2012
Y1 - 2012
N2 - We have used, in this contribution, the measured frequency-dependent ac admittance of irradiated Pd/n-GaN Schottky contacts at different temperatures ranging from 100K to 300K to derive the admittance associated with the displacement current in the Pd/GaN interfacial layer. The normalized conductance versus frequency plots at various temperatures, are characterized essentially by the presence of peaks, which is seen as a signature and a direct evidence for the presence of interface traps. The magnitudes and frequency positions of these peaks allowed the determination of the density and the energy distribution of interface traps as well as the thermal emission rates of carriers from traps and, hence, their capture cross-section.
AB - We have used, in this contribution, the measured frequency-dependent ac admittance of irradiated Pd/n-GaN Schottky contacts at different temperatures ranging from 100K to 300K to derive the admittance associated with the displacement current in the Pd/GaN interfacial layer. The normalized conductance versus frequency plots at various temperatures, are characterized essentially by the presence of peaks, which is seen as a signature and a direct evidence for the presence of interface traps. The magnitudes and frequency positions of these peaks allowed the determination of the density and the energy distribution of interface traps as well as the thermal emission rates of carriers from traps and, hence, their capture cross-section.
KW - Admittance spectroscopy
KW - Interface States
KW - Schottky Contacts
UR - http://www.scopus.com/inward/record.url?scp=84861488120&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861488120&partnerID=8YFLogxK
U2 - 10.1109/MELCON.2012.6196508
DO - 10.1109/MELCON.2012.6196508
M3 - Conference contribution
AN - SCOPUS:84861488120
SN - 9781467307826
SP - 622
EP - 625
BT - Proceedings of the Mediterranean Electrotechnical Conference - MELECON
ER -