Characteristics of interface states in irradiated Pd/n-SiGe as derived from frequency- and temperature-dependent admittance

A. Sellai, M. Mamor

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have used, in this contribution, the measured frequency-dependent ac admittance of irradiated Pd/n-GaN Schottky contacts at different temperatures ranging from 100K to 300K to derive the admittance associated with the displacement current in the Pd/GaN interfacial layer. The normalized conductance versus frequency plots at various temperatures, are characterized essentially by the presence of peaks, which is seen as a signature and a direct evidence for the presence of interface traps. The magnitudes and frequency positions of these peaks allowed the determination of the density and the energy distribution of interface traps as well as the thermal emission rates of carriers from traps and, hence, their capture cross-section.

Original languageEnglish
Title of host publicationProceedings of the Mediterranean Electrotechnical Conference - MELECON
Pages622-625
Number of pages4
DOIs
Publication statusPublished - 2012
Event2012 16th IEEE Mediterranean Electrotechnical Conference, MELECON 2012 - Yasmine Hammamet, Tunisia
Duration: Mar 25 2012Mar 28 2012

Other

Other2012 16th IEEE Mediterranean Electrotechnical Conference, MELECON 2012
CountryTunisia
CityYasmine Hammamet
Period3/25/123/28/12

Keywords

  • Admittance spectroscopy
  • Interface States
  • Schottky Contacts

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Sellai, A., & Mamor, M. (2012). Characteristics of interface states in irradiated Pd/n-SiGe as derived from frequency- and temperature-dependent admittance. In Proceedings of the Mediterranean Electrotechnical Conference - MELECON (pp. 622-625). [6196508] https://doi.org/10.1109/MELCON.2012.6196508