Carrier confinement in 232 nm emission AlGaN-based ultraviolet light-emitting diodes with p-AlN layer

Muhammad Usman*, Tariq Jamil, Sana Saeed

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The influence of the p-AlN layer on the electron leakage, in 232 nm ultraviolet wavelength light-emitting diodes, has been numerically investigated. We sandwiched last quantum barrier (LQB) with p-AlN layer to lower effective barrier heights in the p-region of the device. The simulation results demonstrate that employing p-AlN not only enhances hole concentration but also suppresses electron leakage notably. Employing p-AlN layer, after LQB, works as an efficient p-EBL due to its higher effective conduction band offset. LED with p-AlN layer exhibits almost no droop. Based on these results, we believe that this study may provide a feasible approach for the development of efficient 232 nm deep ultraviolet (DUV) LEDs, which is a crucial wavelength in the disinfection processes.

Original languageEnglish
Article number116097
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Publication statusPublished - Jan 1 2023
Externally publishedYes


  • AlN
  • Internal Quantum Efficiency (IQE)
  • Light-emitting diodes
  • Quantum wells
  • SiLENSe
  • Ultraviolet

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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