TY - JOUR
T1 - Carrier confinement in 232 nm emission AlGaN-based ultraviolet light-emitting diodes with p-AlN layer
AU - Usman, Muhammad
AU - Jamil, Tariq
AU - Saeed, Sana
N1 - Funding Information:
The authors are obliged to the Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Pakistan for lending support for this work. The data that support the findings of this study are available from the corresponding author upon reasonable request.
Publisher Copyright:
© 2022 Elsevier B.V.
PY - 2023/1/1
Y1 - 2023/1/1
N2 - The influence of the p-AlN layer on the electron leakage, in 232 nm ultraviolet wavelength light-emitting diodes, has been numerically investigated. We sandwiched last quantum barrier (LQB) with p-AlN layer to lower effective barrier heights in the p-region of the device. The simulation results demonstrate that employing p-AlN not only enhances hole concentration but also suppresses electron leakage notably. Employing p-AlN layer, after LQB, works as an efficient p-EBL due to its higher effective conduction band offset. LED with p-AlN layer exhibits almost no droop. Based on these results, we believe that this study may provide a feasible approach for the development of efficient 232 nm deep ultraviolet (DUV) LEDs, which is a crucial wavelength in the disinfection processes.
AB - The influence of the p-AlN layer on the electron leakage, in 232 nm ultraviolet wavelength light-emitting diodes, has been numerically investigated. We sandwiched last quantum barrier (LQB) with p-AlN layer to lower effective barrier heights in the p-region of the device. The simulation results demonstrate that employing p-AlN not only enhances hole concentration but also suppresses electron leakage notably. Employing p-AlN layer, after LQB, works as an efficient p-EBL due to its higher effective conduction band offset. LED with p-AlN layer exhibits almost no droop. Based on these results, we believe that this study may provide a feasible approach for the development of efficient 232 nm deep ultraviolet (DUV) LEDs, which is a crucial wavelength in the disinfection processes.
KW - AlN
KW - Internal Quantum Efficiency (IQE)
KW - Light-emitting diodes
KW - Quantum wells
KW - SiLENSe
KW - Ultraviolet
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U2 - 10.1016/j.mseb.2022.116097
DO - 10.1016/j.mseb.2022.116097
M3 - Article
AN - SCOPUS:85140969167
SN - 0921-5107
VL - 287
JO - Materials Science and Engineering: B
JF - Materials Science and Engineering: B
M1 - 116097
ER -