Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC

A. Ferhat Hamida; Z. Ouennoughi; A. Sellai; R. Weiss; H. Ryssel

doi:10.1088/0268-1242/23/4/045005

Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC

A. Ferhat Hamida, Z. Ouennoughi, A. Sellai, R. Weiss, H. Ryssel

Physics

Research output: Contribution to journal › Article › peer-review

71 Citations (Scopus)

Abstract

Electrical properties of tungsten on silicon carbide (4H-SiC) Schottky diodes are investigated through the analysis of the forward current-voltage (I-V) characteristics measured at elevated temperatures within the range of 303-448 K. The subsequently derived Schottky barrier heights (SBHs) and ideality factors are found to be temperature dependent with distributions that are adequately explained within the framework of the model proposed by Tung in which he considers the barrier at a metal-semiconductor interface as consisting of locally non-uniform but interacting patches of different barrier heights embedded in a background of uniform barrier height. A uniform barrier height of 1.248 eV, a Richardson's constant of 129.95 A cm^-2 K² and a factor T_o of 23.92 K obtained agree very well with values published previously for similar Schottky barrier systems. Therefore, it has been concluded that the temperature-dependent I-V characteristics of the device can be successfully explained with lateral inhomogeneities distribution of the SBH.

Original language	English
Article number	045005
Journal	Semiconductor Science and Technology
Volume	23
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/23/4/045005
Publication status	Published - Apr 1 2008

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{0d0007d519974847bd22ae032d8fb18e,

title = "Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC",

abstract = "Electrical properties of tungsten on silicon carbide (4H-SiC) Schottky diodes are investigated through the analysis of the forward current-voltage (I-V) characteristics measured at elevated temperatures within the range of 303-448 K. The subsequently derived Schottky barrier heights (SBHs) and ideality factors are found to be temperature dependent with distributions that are adequately explained within the framework of the model proposed by Tung in which he considers the barrier at a metal-semiconductor interface as consisting of locally non-uniform but interacting patches of different barrier heights embedded in a background of uniform barrier height. A uniform barrier height of 1.248 eV, a Richardson's constant of 129.95 A cm-2 K2 and a factor To of 23.92 K obtained agree very well with values published previously for similar Schottky barrier systems. Therefore, it has been concluded that the temperature-dependent I-V characteristics of the device can be successfully explained with lateral inhomogeneities distribution of the SBH.",

author = "Hamida, {A. Ferhat} and Z. Ouennoughi and A. Sellai and R. Weiss and H. Ryssel",

year = "2008",

month = apr,

day = "1",

doi = "10.1088/0268-1242/23/4/045005",

language = "English",

volume = "23",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "4",

}

TY - JOUR

T1 - Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC

AU - Hamida, A. Ferhat

AU - Ouennoughi, Z.

AU - Sellai, A.

AU - Weiss, R.

AU - Ryssel, H.

PY - 2008/4/1

Y1 - 2008/4/1

N2 - Electrical properties of tungsten on silicon carbide (4H-SiC) Schottky diodes are investigated through the analysis of the forward current-voltage (I-V) characteristics measured at elevated temperatures within the range of 303-448 K. The subsequently derived Schottky barrier heights (SBHs) and ideality factors are found to be temperature dependent with distributions that are adequately explained within the framework of the model proposed by Tung in which he considers the barrier at a metal-semiconductor interface as consisting of locally non-uniform but interacting patches of different barrier heights embedded in a background of uniform barrier height. A uniform barrier height of 1.248 eV, a Richardson's constant of 129.95 A cm-2 K2 and a factor To of 23.92 K obtained agree very well with values published previously for similar Schottky barrier systems. Therefore, it has been concluded that the temperature-dependent I-V characteristics of the device can be successfully explained with lateral inhomogeneities distribution of the SBH.

AB - Electrical properties of tungsten on silicon carbide (4H-SiC) Schottky diodes are investigated through the analysis of the forward current-voltage (I-V) characteristics measured at elevated temperatures within the range of 303-448 K. The subsequently derived Schottky barrier heights (SBHs) and ideality factors are found to be temperature dependent with distributions that are adequately explained within the framework of the model proposed by Tung in which he considers the barrier at a metal-semiconductor interface as consisting of locally non-uniform but interacting patches of different barrier heights embedded in a background of uniform barrier height. A uniform barrier height of 1.248 eV, a Richardson's constant of 129.95 A cm-2 K2 and a factor To of 23.92 K obtained agree very well with values published previously for similar Schottky barrier systems. Therefore, it has been concluded that the temperature-dependent I-V characteristics of the device can be successfully explained with lateral inhomogeneities distribution of the SBH.

UR - http://www.scopus.com/inward/record.url?scp=42449093680&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42449093680&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/23/4/045005

DO - 10.1088/0268-1242/23/4/045005

M3 - Article

AN - SCOPUS:42449093680

SN - 0268-1242

VL - 23

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4

M1 - 045005

ER -

Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC

Abstract

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