Barrier height variations and interface properties of PtSi/Si structures

A. Sellai, P. Dawson

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

To study some of the interfacial properties of PtSi/Si diodes, Schottky structures were fabricated on (100) crystalline silicon substrates by conventional thermal evaporation of Pt on Si followed by annealing at different temperatures (from 400°C to 700°C) to form PtSi. The PtSi/n-Si diodes, all yielded Schottky barrier (SB) heights that are remarkably temperature dependent. The temperature range (20-290 K) over which the I-V characteristics were measured in the present study is broader with a much lower limit (20K), than what is usually reported in literature. These variations in the barrier height are adequately interpreted by introducing spatial inhomogeneity into the barrier potential with a Gaussian distribution having a mean barrier of 0.76 eV and a standard deviation of 30 meV. Multi-frequency capacitance-voltage measurements suggest that the barrier is primarily controlled by the properties of the silicide-silicon interface. The forward C-V characteristics, in particular, show small peaks at low frequencies that can be ascribed to interface states rather than to a series resistance effect.

Original languageEnglish
Pages (from-to)273-278
Number of pages6
JournalSurface Review and Letters
Volume13
Issue number2-3
Publication statusPublished - Apr 2006

Fingerprint

Silicon
Diodes
Capacitance measurement
Thermal evaporation
Interface states
Voltage measurement
Gaussian distribution
Temperature
Annealing
Crystalline materials
silicon
Schottky diodes
normal density functions
electrical measurement
temperature
Substrates
standard deviation
inhomogeneity
capacitance
diodes

Keywords

  • C-V characteristics
  • I-V-T characteristics
  • Schottky contacts
  • Suicide interface

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

Cite this

Barrier height variations and interface properties of PtSi/Si structures. / Sellai, A.; Dawson, P.

In: Surface Review and Letters, Vol. 13, No. 2-3, 04.2006, p. 273-278.

Research output: Contribution to journalArticle

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