Barrier characteristics of PtSi/p-Si Schottky diodes as determined from I-V-T measurements

P. G. McCafferty, A. Sellai, P. Dawson, H. Elabd

Research output: Contribution to journalArticle

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Abstract

The current-voltage-temperature characteristics of PtSi/p-Si Schottky barrier diodes were measured in the temperature range 60-115 K. Deviation of the ideality factor from unity below 80 K may be modelled using the so-called T0 parameter with T0 = 18 K. It is also shown that the curvature in the Richardson plots may be remedied by using the flatband rather than the zero-bias saturation current density. Physically, the departure from ideality is interpreted in terms of an inhomogeneous Schottky contact. Here we determine a mean barrier height at T = 0 K, Φ̄0b = 223 mV, with an (assumed) Gaussian distribution of standard deviation σΦ, = 12.5 mV. These data are correlated with the zero-bias barrier height, Φ0j = 192 mV (at T = 90 K), the photoresponse barrier height, Φph = 205 mV, and the flatband barrier height, Φfb = 214 mV. Finally, the temperature coefficient of the flatband barrier was found to be -0.121 mV K-1, which is approximately equal to 1/2(dEig/dT), thus suggesting that the Fermi level at the interface is pinned to the middle of the band gap.

Original languageEnglish
Pages (from-to)583-592
Number of pages10
JournalSolid State Electronics
Volume39
Issue number4 SPEC. ISS.
DOIs
Publication statusPublished - Apr 1996

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Schottky diodes
Diodes
Schottky barrier diodes
Gaussian distribution
Fermi level
Temperature
Energy gap
Current density
normal density functions
Electric potential
temperature
unity
electric contacts
standard deviation
plots
curvature
current density
deviation
saturation
electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Barrier characteristics of PtSi/p-Si Schottky diodes as determined from I-V-T measurements. / McCafferty, P. G.; Sellai, A.; Dawson, P.; Elabd, H.

In: Solid State Electronics, Vol. 39, No. 4 SPEC. ISS., 04.1996, p. 583-592.

Research output: Contribution to journalArticle

McCafferty, P. G. ; Sellai, A. ; Dawson, P. ; Elabd, H. / Barrier characteristics of PtSi/p-Si Schottky diodes as determined from I-V-T measurements. In: Solid State Electronics. 1996 ; Vol. 39, No. 4 SPEC. ISS. pp. 583-592.
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