### Abstract

The current-voltage-temperature characteristics of PtSi/p-Si Schottky barrier diodes were measured in the temperature range 60-115 K. Deviation of the ideality factor from unity below 80 K may be modelled using the so-called T_{0} parameter with T_{0} = 18 K. It is also shown that the curvature in the Richardson plots may be remedied by using the flatband rather than the zero-bias saturation current density. Physically, the departure from ideality is interpreted in terms of an inhomogeneous Schottky contact. Here we determine a mean barrier height at T = 0 K, Φ̄^{0}_{b} = 223 mV, with an (assumed) Gaussian distribution of standard deviation σΦ, = 12.5 mV. These data are correlated with the zero-bias barrier height, Φ^{0}_{j} = 192 mV (at T = 90 K), the photoresponse barrier height, Φ_{ph} = 205 mV, and the flatband barrier height, Φ_{fb} = 214 mV. Finally, the temperature coefficient of the flatband barrier was found to be -0.121 mV K^{-1}, which is approximately equal to 1/2(dE^{i}_{g}/dT), thus suggesting that the Fermi level at the interface is pinned to the middle of the band gap.

Original language | English |
---|---|

Pages (from-to) | 583-592 |

Number of pages | 10 |

Journal | Solid State Electronics |

Volume | 39 |

Issue number | 4 SPEC. ISS. |

DOIs | |

Publication status | Published - Apr 1996 |

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### ASJC Scopus subject areas

- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics

### Cite this

*Solid State Electronics*,

*39*(4 SPEC. ISS.), 583-592. https://doi.org/10.1016/0038-1101(95)00162-X

**Barrier characteristics of PtSi/p-Si Schottky diodes as determined from I-V-T measurements.** / McCafferty, P. G.; Sellai, A.; Dawson, P.; Elabd, H.

Research output: Contribution to journal › Article

*Solid State Electronics*, vol. 39, no. 4 SPEC. ISS., pp. 583-592. https://doi.org/10.1016/0038-1101(95)00162-X

}

TY - JOUR

T1 - Barrier characteristics of PtSi/p-Si Schottky diodes as determined from I-V-T measurements

AU - McCafferty, P. G.

AU - Sellai, A.

AU - Dawson, P.

AU - Elabd, H.

PY - 1996/4

Y1 - 1996/4

N2 - The current-voltage-temperature characteristics of PtSi/p-Si Schottky barrier diodes were measured in the temperature range 60-115 K. Deviation of the ideality factor from unity below 80 K may be modelled using the so-called T0 parameter with T0 = 18 K. It is also shown that the curvature in the Richardson plots may be remedied by using the flatband rather than the zero-bias saturation current density. Physically, the departure from ideality is interpreted in terms of an inhomogeneous Schottky contact. Here we determine a mean barrier height at T = 0 K, Φ̄0b = 223 mV, with an (assumed) Gaussian distribution of standard deviation σΦ, = 12.5 mV. These data are correlated with the zero-bias barrier height, Φ0j = 192 mV (at T = 90 K), the photoresponse barrier height, Φph = 205 mV, and the flatband barrier height, Φfb = 214 mV. Finally, the temperature coefficient of the flatband barrier was found to be -0.121 mV K-1, which is approximately equal to 1/2(dEig/dT), thus suggesting that the Fermi level at the interface is pinned to the middle of the band gap.

AB - The current-voltage-temperature characteristics of PtSi/p-Si Schottky barrier diodes were measured in the temperature range 60-115 K. Deviation of the ideality factor from unity below 80 K may be modelled using the so-called T0 parameter with T0 = 18 K. It is also shown that the curvature in the Richardson plots may be remedied by using the flatband rather than the zero-bias saturation current density. Physically, the departure from ideality is interpreted in terms of an inhomogeneous Schottky contact. Here we determine a mean barrier height at T = 0 K, Φ̄0b = 223 mV, with an (assumed) Gaussian distribution of standard deviation σΦ, = 12.5 mV. These data are correlated with the zero-bias barrier height, Φ0j = 192 mV (at T = 90 K), the photoresponse barrier height, Φph = 205 mV, and the flatband barrier height, Φfb = 214 mV. Finally, the temperature coefficient of the flatband barrier was found to be -0.121 mV K-1, which is approximately equal to 1/2(dEig/dT), thus suggesting that the Fermi level at the interface is pinned to the middle of the band gap.

UR - http://www.scopus.com/inward/record.url?scp=0030129881&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030129881&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(95)00162-X

DO - 10.1016/0038-1101(95)00162-X

M3 - Article

AN - SCOPUS:0030129881

VL - 39

SP - 583

EP - 592

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 4 SPEC. ISS.

ER -