Abstract
I-V and C-V measurements performed on Au/Mn 5Ge 3/n-Ge structures, prepared for spintronic applications, are presented and analysed over a wide range of temperatures (50 K-300 K) with the goal of elucidating the prevailing conduction mechanism(s). The effects of image force lowering and recombination in the depletion region on the measured current are shown to be of little significance and cannot acceptably explain the drawbacks that arise when a pure thermionic emission model is used in analyzing the temperature dependence of the obtained electrical characteristics. Considering, however, the eventual contribution of thermally assisted tunneling to the current generating mechanism could explain the departure from pure thermionic emission. Thermionic field emission seems indeed to explain better our I-V data and the temperature dependence of related parameters. Also, the C-V measurements reveal a nonuniform carrier distribution with manifest peaks in the doping profile, possibly signifying the existence of charge accumulation and trap centers.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the Mediterranean Electrotechnical Conference - MELECON |
| Pages | 179-182 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2012 |
| Event | 2012 16th IEEE Mediterranean Electrotechnical Conference, MELECON 2012 - Yasmine Hammamet, Tunisia Duration: Mar 25 2012 → Mar 28 2012 |
Other
| Other | 2012 16th IEEE Mediterranean Electrotechnical Conference, MELECON 2012 |
|---|---|
| Country | Tunisia |
| City | Yasmine Hammamet |
| Period | 3/25/12 → 3/28/12 |
Fingerprint
Keywords
- conduction mechanism
- electrical characteristics
- Schottky diodes
- spintronic devices
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Au/Mn 5Ge 3/n-Ge(111) Schottky barrier characteristics from I-V-T and C-V-T data. / Sellai, Azzouz; Ouennoughi, Zahir; Le Thanh, Vinh; Petit, Matthieu; Michez, Lisa; Mesli, Abdelmadjid.
Proceedings of the Mediterranean Electrotechnical Conference - MELECON. 2012. p. 179-182 6196408.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Au/Mn 5Ge 3/n-Ge(111) Schottky barrier characteristics from I-V-T and C-V-T data
AU - Sellai, Azzouz
AU - Ouennoughi, Zahir
AU - Le Thanh, Vinh
AU - Petit, Matthieu
AU - Michez, Lisa
AU - Mesli, Abdelmadjid
PY - 2012
Y1 - 2012
N2 - I-V and C-V measurements performed on Au/Mn 5Ge 3/n-Ge structures, prepared for spintronic applications, are presented and analysed over a wide range of temperatures (50 K-300 K) with the goal of elucidating the prevailing conduction mechanism(s). The effects of image force lowering and recombination in the depletion region on the measured current are shown to be of little significance and cannot acceptably explain the drawbacks that arise when a pure thermionic emission model is used in analyzing the temperature dependence of the obtained electrical characteristics. Considering, however, the eventual contribution of thermally assisted tunneling to the current generating mechanism could explain the departure from pure thermionic emission. Thermionic field emission seems indeed to explain better our I-V data and the temperature dependence of related parameters. Also, the C-V measurements reveal a nonuniform carrier distribution with manifest peaks in the doping profile, possibly signifying the existence of charge accumulation and trap centers.
AB - I-V and C-V measurements performed on Au/Mn 5Ge 3/n-Ge structures, prepared for spintronic applications, are presented and analysed over a wide range of temperatures (50 K-300 K) with the goal of elucidating the prevailing conduction mechanism(s). The effects of image force lowering and recombination in the depletion region on the measured current are shown to be of little significance and cannot acceptably explain the drawbacks that arise when a pure thermionic emission model is used in analyzing the temperature dependence of the obtained electrical characteristics. Considering, however, the eventual contribution of thermally assisted tunneling to the current generating mechanism could explain the departure from pure thermionic emission. Thermionic field emission seems indeed to explain better our I-V data and the temperature dependence of related parameters. Also, the C-V measurements reveal a nonuniform carrier distribution with manifest peaks in the doping profile, possibly signifying the existence of charge accumulation and trap centers.
KW - conduction mechanism
KW - electrical characteristics
KW - Schottky diodes
KW - spintronic devices
UR - http://www.scopus.com/inward/record.url?scp=84861507085&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861507085&partnerID=8YFLogxK
U2 - 10.1109/MELCON.2012.6196408
DO - 10.1109/MELCON.2012.6196408
M3 - Conference contribution
SN - 9781467307826
SP - 179
EP - 182
BT - Proceedings of the Mediterranean Electrotechnical Conference - MELECON
ER -