Au/Mn 5Ge 3/n-Ge(111) Schottky barrier characteristics from I-V-T and C-V-T data

Azzouz Sellai; Zahir Ouennoughi; Vinh Le Thanh; Matthieu Petit; Lisa Michez; Abdelmadjid Mesli

doi:10.1109/MELCON.2012.6196408

Au/Mn 5Ge 3/n-Ge(111) Schottky barrier characteristics from I-V-T and C-V-T data

Azzouz Sellai^*, Zahir Ouennoughi, Vinh Le Thanh, Matthieu Petit, Lisa Michez, Abdelmadjid Mesli

^*Corresponding author for this work

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

I-V and C-V measurements performed on Au/Mn ₅Ge ₃/n-Ge structures, prepared for spintronic applications, are presented and analysed over a wide range of temperatures (50 K-300 K) with the goal of elucidating the prevailing conduction mechanism(s). The effects of image force lowering and recombination in the depletion region on the measured current are shown to be of little significance and cannot acceptably explain the drawbacks that arise when a pure thermionic emission model is used in analyzing the temperature dependence of the obtained electrical characteristics. Considering, however, the eventual contribution of thermally assisted tunneling to the current generating mechanism could explain the departure from pure thermionic emission. Thermionic field emission seems indeed to explain better our I-V data and the temperature dependence of related parameters. Also, the C-V measurements reveal a nonuniform carrier distribution with manifest peaks in the doping profile, possibly signifying the existence of charge accumulation and trap centers.

Original language	English
Title of host publication	Proceedings of the Mediterranean Electrotechnical Conference - MELECON
Pages	179-182
Number of pages	4
DOIs	https://doi.org/10.1109/MELCON.2012.6196408
Publication status	Published - 2012
Event	2012 16th IEEE Mediterranean Electrotechnical Conference, MELECON 2012 - Yasmine Hammamet, Tunisia Duration: Mar 25 2012 → Mar 28 2012

Other

Other	2012 16th IEEE Mediterranean Electrotechnical Conference, MELECON 2012
Country	Tunisia
City	Yasmine Hammamet
Period	3/25/12 → 3/28/12

Keywords

conduction mechanism
electrical characteristics
Schottky diodes
spintronic devices

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/MELCON.2012.6196408

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Au/Mn 5Ge 3/n-Ge(111) Schottky barrier characteristics from I-V-T and C-V-T data. / Sellai, Azzouz; Ouennoughi, Zahir; Le Thanh, Vinh; Petit, Matthieu; Michez, Lisa; Mesli, Abdelmadjid.

Proceedings of the Mediterranean Electrotechnical Conference - MELECON. 2012. p. 179-182 6196408.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sellai, A, Ouennoughi, Z, Le Thanh, V, Petit, M, Michez, L & Mesli, A 2012, Au/Mn 5Ge 3/n-Ge(111) Schottky barrier characteristics from I-V-T and C-V-T data. in Proceedings of the Mediterranean Electrotechnical Conference - MELECON., 6196408, pp. 179-182, 2012 16th IEEE Mediterranean Electrotechnical Conference, MELECON 2012, Yasmine Hammamet, Tunisia, 3/25/12. https://doi.org/10.1109/MELCON.2012.6196408

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title = "Au/Mn 5Ge 3/n-Ge(111) Schottky barrier characteristics from I-V-T and C-V-T data",

abstract = "I-V and C-V measurements performed on Au/Mn 5Ge 3/n-Ge structures, prepared for spintronic applications, are presented and analysed over a wide range of temperatures (50 K-300 K) with the goal of elucidating the prevailing conduction mechanism(s). The effects of image force lowering and recombination in the depletion region on the measured current are shown to be of little significance and cannot acceptably explain the drawbacks that arise when a pure thermionic emission model is used in analyzing the temperature dependence of the obtained electrical characteristics. Considering, however, the eventual contribution of thermally assisted tunneling to the current generating mechanism could explain the departure from pure thermionic emission. Thermionic field emission seems indeed to explain better our I-V data and the temperature dependence of related parameters. Also, the C-V measurements reveal a nonuniform carrier distribution with manifest peaks in the doping profile, possibly signifying the existence of charge accumulation and trap centers.",

keywords = "conduction mechanism, electrical characteristics, Schottky diodes, spintronic devices",

author = "Azzouz Sellai and Zahir Ouennoughi and {Le Thanh}, Vinh and Matthieu Petit and Lisa Michez and Abdelmadjid Mesli",

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AU - Petit, Matthieu

AU - Michez, Lisa

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AB - I-V and C-V measurements performed on Au/Mn 5Ge 3/n-Ge structures, prepared for spintronic applications, are presented and analysed over a wide range of temperatures (50 K-300 K) with the goal of elucidating the prevailing conduction mechanism(s). The effects of image force lowering and recombination in the depletion region on the measured current are shown to be of little significance and cannot acceptably explain the drawbacks that arise when a pure thermionic emission model is used in analyzing the temperature dependence of the obtained electrical characteristics. Considering, however, the eventual contribution of thermally assisted tunneling to the current generating mechanism could explain the departure from pure thermionic emission. Thermionic field emission seems indeed to explain better our I-V data and the temperature dependence of related parameters. Also, the C-V measurements reveal a nonuniform carrier distribution with manifest peaks in the doping profile, possibly signifying the existence of charge accumulation and trap centers.

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