Augmenting the internal quantum efficiency of GaN-based green light-emitting diodes by sandwiching active region with p-AlGaN layers

Muhammad Usman*, Abdur Rehman Anwar, Munaza Munsif, Shahzeb Malik, Noor Ul Islam, Tariq Jamil

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, InGaN-based green light-emitting diodes (LEDs) are studied theoretically. We have minimized the problem of asymmetrical carrier distribution in the active region. We have sandwiched the active region between p-AlGaN layers and observed improvement in the device performance. The hole injection, as well as the distribution, is improved remarkably in all the QWs. The asymmetry between the concentrations of electrons and holes in the emission region is reduced in contrast to the conventional structure. The radiative recombination is also enhanced because all the QWs contribute greatly in radiative recombination.

Original languageEnglish
Pages (from-to)837-842
Number of pages6
JournalJournal of Modern Optics
Volume67
Issue number9
DOIs
Publication statusPublished - May 20 2020

Keywords

  • efficiency
  • green
  • InGaN
  • light-emitting diodes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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