Anomalous strain relaxation behavior of Fe3O4/MgO (100) heteroepitaxial system grown using molecular beam epitaxy

S. K. Arora, R. G S Sofin, I. V. Shvets, M. Luysberg

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

Strain relaxation studies in epitaxial magnetite (Fe3 O4) thin films grown on MgO (100) substrates using high-resolution x-ray diffraction and cross-sectional transmission electron microscopy reveal that the films remain fully coherent up to a thickness of 700 nm. This thickness is much greater than the critical thickness tc for strain relaxation estimated from mismatch strain. Anomalous strain relaxation behavior of Fe3 O4 MgO heteroepitaxy is attributed to the reduction in the effective stress experienced by the film due to the presence of antiphase boundaries (APBs) that enable the film to maintain coherency with the substrate at large thickness. However, the stress accommodation in the film depends upon the nature and density of the APBs.

Original languageEnglish
Article number073908
JournalJournal of Applied Physics
Volume100
Issue number7
DOIs
Publication statusPublished - 2006

Fingerprint

molecular beam epitaxy
antiphase boundaries
accommodation
magnetite
x ray diffraction
transmission electron microscopy
high resolution
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Anomalous strain relaxation behavior of Fe3O4/MgO (100) heteroepitaxial system grown using molecular beam epitaxy. / Arora, S. K.; Sofin, R. G S; Shvets, I. V.; Luysberg, M.

In: Journal of Applied Physics, Vol. 100, No. 7, 073908, 2006.

Research output: Contribution to journalArticle

@article{195d41b94ad9446f96b2a5709d5bad26,
title = "Anomalous strain relaxation behavior of Fe3O4/MgO (100) heteroepitaxial system grown using molecular beam epitaxy",
abstract = "Strain relaxation studies in epitaxial magnetite (Fe3 O4) thin films grown on MgO (100) substrates using high-resolution x-ray diffraction and cross-sectional transmission electron microscopy reveal that the films remain fully coherent up to a thickness of 700 nm. This thickness is much greater than the critical thickness tc for strain relaxation estimated from mismatch strain. Anomalous strain relaxation behavior of Fe3 O4 MgO heteroepitaxy is attributed to the reduction in the effective stress experienced by the film due to the presence of antiphase boundaries (APBs) that enable the film to maintain coherency with the substrate at large thickness. However, the stress accommodation in the film depends upon the nature and density of the APBs.",
author = "Arora, {S. K.} and Sofin, {R. G S} and Shvets, {I. V.} and M. Luysberg",
year = "2006",
doi = "10.1063/1.2349468",
language = "English",
volume = "100",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Anomalous strain relaxation behavior of Fe3O4/MgO (100) heteroepitaxial system grown using molecular beam epitaxy

AU - Arora, S. K.

AU - Sofin, R. G S

AU - Shvets, I. V.

AU - Luysberg, M.

PY - 2006

Y1 - 2006

N2 - Strain relaxation studies in epitaxial magnetite (Fe3 O4) thin films grown on MgO (100) substrates using high-resolution x-ray diffraction and cross-sectional transmission electron microscopy reveal that the films remain fully coherent up to a thickness of 700 nm. This thickness is much greater than the critical thickness tc for strain relaxation estimated from mismatch strain. Anomalous strain relaxation behavior of Fe3 O4 MgO heteroepitaxy is attributed to the reduction in the effective stress experienced by the film due to the presence of antiphase boundaries (APBs) that enable the film to maintain coherency with the substrate at large thickness. However, the stress accommodation in the film depends upon the nature and density of the APBs.

AB - Strain relaxation studies in epitaxial magnetite (Fe3 O4) thin films grown on MgO (100) substrates using high-resolution x-ray diffraction and cross-sectional transmission electron microscopy reveal that the films remain fully coherent up to a thickness of 700 nm. This thickness is much greater than the critical thickness tc for strain relaxation estimated from mismatch strain. Anomalous strain relaxation behavior of Fe3 O4 MgO heteroepitaxy is attributed to the reduction in the effective stress experienced by the film due to the presence of antiphase boundaries (APBs) that enable the film to maintain coherency with the substrate at large thickness. However, the stress accommodation in the film depends upon the nature and density of the APBs.

UR - http://www.scopus.com/inward/record.url?scp=33750030194&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750030194&partnerID=8YFLogxK

U2 - 10.1063/1.2349468

DO - 10.1063/1.2349468

M3 - Article

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 073908

ER -