Analysis of interface states in Pd/n- GaN by temperature and frequency dependent admittance

Azzouz Sellai*, Mohammed Mamor

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The measured frequency-dependent ac admittance over a range of temperatures (100 K-300 K) was used to obtain the admittance Gss + jωCss associated with the displacement current in the Pd/GaN interfacial layer. Using two methods based on C-V data at two frequencies and conductance data over a wide range of frequencies, the interface states density is determined to be of the order of 1013 cm-2 eV-1 at room temperature and shows a slight increase with decreasing temperatures. The derived emission rates range mainly from 105 s-1 to 106 s-1 and are to some extent voltage and temperature dependent, showing a decrease with decreasing temperatures. The subsequently obtained capture cross-sections are thermally activated with values varying from 10-14to 10-16 cm2 and reveal also a significant dependence on the applied forward bias. The density of interface states obtained in the ac regime is roughly in line with that previously derived from the ideality factor of the dc I-V characteristics.

Original languageEnglish
Pages (from-to)1611-1615
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number5
DOIs
Publication statusPublished - May 2011

Keywords

  • Conductance method
  • Interface states
  • Schottky contact

ASJC Scopus subject areas

  • Condensed Matter Physics

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