Analysis of interface states in Pd/n- GaN by temperature and frequency dependent admittance

Azzouz Sellai, Mohammed Mamor

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The measured frequency-dependent ac admittance over a range of temperatures (100 K-300 K) was used to obtain the admittance Gss + jωCss associated with the displacement current in the Pd/GaN interfacial layer. Using two methods based on C-V data at two frequencies and conductance data over a wide range of frequencies, the interface states density is determined to be of the order of 1013 cm-2 eV-1 at room temperature and shows a slight increase with decreasing temperatures. The derived emission rates range mainly from 105 s-1 to 106 s-1 and are to some extent voltage and temperature dependent, showing a decrease with decreasing temperatures. The subsequently obtained capture cross-sections are thermally activated with values varying from 10-14to 10-16 cm2 and reveal also a significant dependence on the applied forward bias. The density of interface states obtained in the ac regime is roughly in line with that previously derived from the ideality factor of the dc I-V characteristics.

Original languageEnglish
Pages (from-to)1611-1615
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number5
DOIs
Publication statusPublished - May 2011

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electrical impedance
temperature
absorption cross sections
electric potential
room temperature

Keywords

  • Conductance method
  • Interface states
  • Schottky contact

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Analysis of interface states in Pd/n- GaN by temperature and frequency dependent admittance. / Sellai, Azzouz; Mamor, Mohammed.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, No. 5, 05.2011, p. 1611-1615.

Research output: Contribution to journalArticle

@article{fbbc9d5f461e42d7acc321a972f0dd3e,
title = "Analysis of interface states in Pd/n- GaN by temperature and frequency dependent admittance",
abstract = "The measured frequency-dependent ac admittance over a range of temperatures (100 K-300 K) was used to obtain the admittance Gss + jωCss associated with the displacement current in the Pd/GaN interfacial layer. Using two methods based on C-V data at two frequencies and conductance data over a wide range of frequencies, the interface states density is determined to be of the order of 1013 cm-2 eV-1 at room temperature and shows a slight increase with decreasing temperatures. The derived emission rates range mainly from 105 s-1 to 106 s-1 and are to some extent voltage and temperature dependent, showing a decrease with decreasing temperatures. The subsequently obtained capture cross-sections are thermally activated with values varying from 10-14to 10-16 cm2 and reveal also a significant dependence on the applied forward bias. The density of interface states obtained in the ac regime is roughly in line with that previously derived from the ideality factor of the dc I-V characteristics.",
keywords = "Conductance method, Interface states, Schottky contact",
author = "Azzouz Sellai and Mohammed Mamor",
year = "2011",
month = "5",
doi = "10.1002/pssc.201000563",
language = "English",
volume = "8",
pages = "1611--1615",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "5",

}

TY - JOUR

T1 - Analysis of interface states in Pd/n- GaN by temperature and frequency dependent admittance

AU - Sellai, Azzouz

AU - Mamor, Mohammed

PY - 2011/5

Y1 - 2011/5

N2 - The measured frequency-dependent ac admittance over a range of temperatures (100 K-300 K) was used to obtain the admittance Gss + jωCss associated with the displacement current in the Pd/GaN interfacial layer. Using two methods based on C-V data at two frequencies and conductance data over a wide range of frequencies, the interface states density is determined to be of the order of 1013 cm-2 eV-1 at room temperature and shows a slight increase with decreasing temperatures. The derived emission rates range mainly from 105 s-1 to 106 s-1 and are to some extent voltage and temperature dependent, showing a decrease with decreasing temperatures. The subsequently obtained capture cross-sections are thermally activated with values varying from 10-14to 10-16 cm2 and reveal also a significant dependence on the applied forward bias. The density of interface states obtained in the ac regime is roughly in line with that previously derived from the ideality factor of the dc I-V characteristics.

AB - The measured frequency-dependent ac admittance over a range of temperatures (100 K-300 K) was used to obtain the admittance Gss + jωCss associated with the displacement current in the Pd/GaN interfacial layer. Using two methods based on C-V data at two frequencies and conductance data over a wide range of frequencies, the interface states density is determined to be of the order of 1013 cm-2 eV-1 at room temperature and shows a slight increase with decreasing temperatures. The derived emission rates range mainly from 105 s-1 to 106 s-1 and are to some extent voltage and temperature dependent, showing a decrease with decreasing temperatures. The subsequently obtained capture cross-sections are thermally activated with values varying from 10-14to 10-16 cm2 and reveal also a significant dependence on the applied forward bias. The density of interface states obtained in the ac regime is roughly in line with that previously derived from the ideality factor of the dc I-V characteristics.

KW - Conductance method

KW - Interface states

KW - Schottky contact

UR - http://www.scopus.com/inward/record.url?scp=79955596944&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955596944&partnerID=8YFLogxK

U2 - 10.1002/pssc.201000563

DO - 10.1002/pssc.201000563

M3 - Article

AN - SCOPUS:79955596944

VL - 8

SP - 1611

EP - 1615

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 5

ER -