Analysis of frequency- and temperature-dependent interface states in PtSi/p-Si Schottky diodes

A. Sellai, Z. Ouennoughi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

To yield quantitative information about their interface states, PtSi/p-Si Schottky structures have been studied using conductance and capacitance measurements over a wide range of frequencies (1 kHz to 1 MHz) and at several temperatures (80-140 K). The increase in capacitance at lower frequencies is seen as a signature of interface states, the densities of which are evaluated to be of the order of ∼1012 eV-1 cm-2. The presence of interface states is also evidenced as a peak in the conductance-frequency characteristics that increases in magnitude with decreasing temperatures. The variations of interface conductance are best described by an analytical equation derived assuming an energy-dependent cross-section of these interface states. The conductance data is subsequently used to extract the relaxation times of interface states and their energy distribution with respect to the top of the valence band. Relaxation times, in particular, while temperature dependent with an average value of ∼4 μs, show a noticeably weak dependence on bias.

Original languageEnglish
Pages (from-to)179-182
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume154-155
Issue number1-3
DOIs
Publication statusPublished - Dec 5 2008

Fingerprint

Interface states
Schottky diodes
Diodes
Relaxation time
Temperature
temperature
relaxation time
capacitance
Capacitance measurement
Valence bands
Capacitance
energy distribution
signatures
low frequencies
valence
cross sections

Keywords

  • Conductance method
  • Interface states
  • Schottky contacts

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

@article{d68807cfb71545cabfc3a1f7b7b4a4cd,
title = "Analysis of frequency- and temperature-dependent interface states in PtSi/p-Si Schottky diodes",
abstract = "To yield quantitative information about their interface states, PtSi/p-Si Schottky structures have been studied using conductance and capacitance measurements over a wide range of frequencies (1 kHz to 1 MHz) and at several temperatures (80-140 K). The increase in capacitance at lower frequencies is seen as a signature of interface states, the densities of which are evaluated to be of the order of ∼1012 eV-1 cm-2. The presence of interface states is also evidenced as a peak in the conductance-frequency characteristics that increases in magnitude with decreasing temperatures. The variations of interface conductance are best described by an analytical equation derived assuming an energy-dependent cross-section of these interface states. The conductance data is subsequently used to extract the relaxation times of interface states and their energy distribution with respect to the top of the valence band. Relaxation times, in particular, while temperature dependent with an average value of ∼4 μs, show a noticeably weak dependence on bias.",
keywords = "Conductance method, Interface states, Schottky contacts",
author = "A. Sellai and Z. Ouennoughi",
year = "2008",
month = "12",
day = "5",
doi = "10.1016/j.mseb.2008.09.048",
language = "English",
volume = "154-155",
pages = "179--182",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "1-3",

}

TY - JOUR

T1 - Analysis of frequency- and temperature-dependent interface states in PtSi/p-Si Schottky diodes

AU - Sellai, A.

AU - Ouennoughi, Z.

PY - 2008/12/5

Y1 - 2008/12/5

N2 - To yield quantitative information about their interface states, PtSi/p-Si Schottky structures have been studied using conductance and capacitance measurements over a wide range of frequencies (1 kHz to 1 MHz) and at several temperatures (80-140 K). The increase in capacitance at lower frequencies is seen as a signature of interface states, the densities of which are evaluated to be of the order of ∼1012 eV-1 cm-2. The presence of interface states is also evidenced as a peak in the conductance-frequency characteristics that increases in magnitude with decreasing temperatures. The variations of interface conductance are best described by an analytical equation derived assuming an energy-dependent cross-section of these interface states. The conductance data is subsequently used to extract the relaxation times of interface states and their energy distribution with respect to the top of the valence band. Relaxation times, in particular, while temperature dependent with an average value of ∼4 μs, show a noticeably weak dependence on bias.

AB - To yield quantitative information about their interface states, PtSi/p-Si Schottky structures have been studied using conductance and capacitance measurements over a wide range of frequencies (1 kHz to 1 MHz) and at several temperatures (80-140 K). The increase in capacitance at lower frequencies is seen as a signature of interface states, the densities of which are evaluated to be of the order of ∼1012 eV-1 cm-2. The presence of interface states is also evidenced as a peak in the conductance-frequency characteristics that increases in magnitude with decreasing temperatures. The variations of interface conductance are best described by an analytical equation derived assuming an energy-dependent cross-section of these interface states. The conductance data is subsequently used to extract the relaxation times of interface states and their energy distribution with respect to the top of the valence band. Relaxation times, in particular, while temperature dependent with an average value of ∼4 μs, show a noticeably weak dependence on bias.

KW - Conductance method

KW - Interface states

KW - Schottky contacts

UR - http://www.scopus.com/inward/record.url?scp=56949107466&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=56949107466&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2008.09.048

DO - 10.1016/j.mseb.2008.09.048

M3 - Article

AN - SCOPUS:56949107466

VL - 154-155

SP - 179

EP - 182

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -