Abstract
The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 1014 to 3.6 × 1015 cm−3, together with one hole trap with energy depth of 0.83 eV and concentration of 8 × 1014 cm−3. It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction.
Original language | English |
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Pages (from-to) | 1099-1100 |
Number of pages | 2 |
Journal | Electronics |
Volume | 4 |
Issue number | 4 |
DOIs | |
Publication status | Published - Dec 4 2015 |
Keywords
- Activation energy
- Beta irradiation
- Deep level transient spectroscopy (DLTS)
- GaN p-i-n diodes
ASJC Scopus subject areas
- Control and Systems Engineering
- Signal Processing
- Hardware and Architecture
- Computer Networks and Communications
- Electrical and Electronic Engineering