Analysis of deep level defects in GaN p-i-n diodes after beta particle irradiation

Sofiane Belahsene, Noor Alhuda Al Saqri, Dler Jameel, Abdelmadjid Mesli, Anthony Martinez, Jacques De Sanoit, Abdallah Ougazzaden, Jean Paul Salvestrini, Abderrahim Ramdane, Mohamed Henini

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 1014 to 3.6 × 1015 cm−3, together with one hole trap with energy depth of 0.83 eV and concentration of 8 × 1014 cm−3. It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction.

Original languageEnglish
Pages (from-to)1099-1100
Number of pages2
JournalElectronics
Volume4
Issue number4
DOIs
Publication statusPublished - Dec 4 2015

Keywords

  • Activation energy
  • Beta irradiation
  • Deep level transient spectroscopy (DLTS)
  • GaN p-i-n diodes

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Signal Processing
  • Hardware and Architecture
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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    Belahsene, S., Saqri, N. A. A., Jameel, D., Mesli, A., Martinez, A., Sanoit, J. D., Ougazzaden, A., Salvestrini, J. P., Ramdane, A., & Henini, M. (2015). Analysis of deep level defects in GaN p-i-n diodes after beta particle irradiation. Electronics, 4(4), 1099-1100. https://doi.org/10.3390/electronics4041090