Analysis of deep level defects in GaN p-i-n diodes after beta particle irradiation

Sofiane Belahsene*, Noor Alhuda Al Saqri, Dler Jameel, Abdelmadjid Mesli, Anthony Martinez, Jacques De Sanoit, Abdallah Ougazzaden, Jean Paul Salvestrini, Abderrahim Ramdane, Mohamed Henini

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 1014 to 3.6 × 1015 cm−3, together with one hole trap with energy depth of 0.83 eV and concentration of 8 × 1014 cm−3. It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction.

Original languageEnglish
Pages (from-to)1099-1100
Number of pages2
JournalElectronics
Volume4
Issue number4
DOIs
Publication statusPublished - Dec 4 2015

Keywords

  • Activation energy
  • Beta irradiation
  • Deep level transient spectroscopy (DLTS)
  • GaN p-i-n diodes

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Signal Processing
  • Hardware and Architecture
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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