Votage step response of Al(Ga)As GaAs resonant tunnel diodes

A. Sellai; A. Zarea; M. S. Raven; D. P. Steenson; J. M. Chamberlain; M. Henini; O. H. Hughes

doi:10.1016/0749-6036(91)90149-L

Votage step response of Al(Ga)As GaAs resonant tunnel diodes

A. Sellai^*, A. Zarea, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

^*المؤلف المقابل لهذا العمل

نتاج البحث: المساهمة في مجلة › Article › مراجعة النظراء

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ملخص

The step response of Al(Ga)As GaAs double barrier resonant tunnel (DBRT) diodes was determined using a semi-empirical approach which uses high frequency small signal conductance measured data rather than static current voltage characteristics. The differential equation arising from the equivalent circuit of the DBRT diode is solved for each value of the measured conductance. This is repeated throughout the negative differential conductance region finally yielding the large signal step response. The results obtained are compared with direct time domain reflectometry measurements using a network analyser.

اللغة الأصلية	English
الصفحات (من إلى)	63-66
عدد الصفحات	4
دورية	Superlattices and Microstructures
مستوى الصوت	10
رقم الإصدار	1
المعرِّفات الرقمية للأشياء	https://doi.org/10.1016/0749-6036(91)90149-L
حالة النشر	Published - 1991
منشور خارجيًا	نعم

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10.1016/0749-6036(91)90149-L

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title = "Votage step response of Al(Ga)As GaAs resonant tunnel diodes",

abstract = "The step response of Al(Ga)As GaAs double barrier resonant tunnel (DBRT) diodes was determined using a semi-empirical approach which uses high frequency small signal conductance measured data rather than static current voltage characteristics. The differential equation arising from the equivalent circuit of the DBRT diode is solved for each value of the measured conductance. This is repeated throughout the negative differential conductance region finally yielding the large signal step response. The results obtained are compared with direct time domain reflectometry measurements using a network analyser.",

author = "A. Sellai and A. Zarea and Raven, {M. S.} and Steenson, {D. P.} and Chamberlain, {J. M.} and M. Henini and Hughes, {O. H.}",

year = "1991",

doi = "10.1016/0749-6036(91)90149-L",

language = "English",

volume = "10",

pages = "63--66",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

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TY - JOUR

T1 - Votage step response of Al(Ga)As GaAs resonant tunnel diodes

AU - Sellai, A.

AU - Zarea, A.

AU - Raven, M. S.

AU - Steenson, D. P.

AU - Chamberlain, J. M.

AU - Henini, M.

AU - Hughes, O. H.

PY - 1991

Y1 - 1991

N2 - The step response of Al(Ga)As GaAs double barrier resonant tunnel (DBRT) diodes was determined using a semi-empirical approach which uses high frequency small signal conductance measured data rather than static current voltage characteristics. The differential equation arising from the equivalent circuit of the DBRT diode is solved for each value of the measured conductance. This is repeated throughout the negative differential conductance region finally yielding the large signal step response. The results obtained are compared with direct time domain reflectometry measurements using a network analyser.

AB - The step response of Al(Ga)As GaAs double barrier resonant tunnel (DBRT) diodes was determined using a semi-empirical approach which uses high frequency small signal conductance measured data rather than static current voltage characteristics. The differential equation arising from the equivalent circuit of the DBRT diode is solved for each value of the measured conductance. This is repeated throughout the negative differential conductance region finally yielding the large signal step response. The results obtained are compared with direct time domain reflectometry measurements using a network analyser.

UR - http://www.scopus.com/inward/record.url?scp=0025803372&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025803372&partnerID=8YFLogxK

U2 - 10.1016/0749-6036(91)90149-L

DO - 10.1016/0749-6036(91)90149-L

M3 - Article

AN - SCOPUS:0025803372

SN - 0749-6036

VL - 10

SP - 63

EP - 66

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1

ER -

Votage step response of Al(Ga)As GaAs resonant tunnel diodes

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