TY - GEN
T1 - Temperature dependence of dark current in a Si-pin photodiode
AU - Sellai, Azzouz
PY - 2008
Y1 - 2008
N2 - We have studied the temperature dependence of the forward dark current in a Si PIN photodiode. The temperature variations of the ideality factor and saturation current suggest that, depending on temperature and bias, both tunneling enhanced interface recombination and bulk recombination contribute to the conduction process. Furthermore, the capacitance measurements reveal that the doping density distribution is closer to the case of a linearly graded junction with an impurity gradient that is practically temperature independent.
AB - We have studied the temperature dependence of the forward dark current in a Si PIN photodiode. The temperature variations of the ideality factor and saturation current suggest that, depending on temperature and bias, both tunneling enhanced interface recombination and bulk recombination contribute to the conduction process. Furthermore, the capacitance measurements reveal that the doping density distribution is closer to the case of a linearly graded junction with an impurity gradient that is practically temperature independent.
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UR - http://www.scopus.com/inward/citedby.url?scp=65949116162&partnerID=8YFLogxK
U2 - 10.1109/SMELEC.2008.4770321
DO - 10.1109/SMELEC.2008.4770321
M3 - Conference contribution
AN - SCOPUS:65949116162
SN - 9781424425617
T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
SP - 267
EP - 270
BT - ICSE 2008 Proceedings - 2008 IEEE International Conference on Semiconductor Electronics
T2 - 2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008
Y2 - 25 November 2008 through 27 November 2008
ER -