TY - JOUR
T1 - Polymer field-effect transistor gated via a poly(styrenesulfonic acid) thin film
AU - Said, Elias
AU - Crispin, Xavier
AU - Herlogsson, Lars
AU - Elhag, Sami
AU - Robinson, Nathaniel D.
AU - Berggren, Magnus
PY - 2006/10/1
Y1 - 2006/10/1
N2 - A polyanionic proton conductor, named poly(styrenesulfonic acid) (PSSH), is used to gate an organic field-effect transistor (OFET) based on poly(3-hexylthiophene) (P3HT). Upon applying a gate bias, large electric double layer capacitors (EDLCs) are formed quickly at the gate-PSSH and P3HT-PSSH interfaces due to proton migration in the polyelectrolyte. This type of robust transistor, called an EDLC-OFET, displays fast response (
AB - A polyanionic proton conductor, named poly(styrenesulfonic acid) (PSSH), is used to gate an organic field-effect transistor (OFET) based on poly(3-hexylthiophene) (P3HT). Upon applying a gate bias, large electric double layer capacitors (EDLCs) are formed quickly at the gate-PSSH and P3HT-PSSH interfaces due to proton migration in the polyelectrolyte. This type of robust transistor, called an EDLC-OFET, displays fast response (
KW - Field effect devices
KW - Capacitors
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U2 - 10.1063/1.2358315
DO - 10.1063/1.2358315
M3 - Article
SN - 0003-6951
VL - 89
SP - 143507
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 14
M1 - 143507
ER -