Path to achieve sub-10-nm half-pitch using electron beam lithography

A. K.G. Tavakkoli, S. N. Piramanayagam, M. Ranjbar, R. Sbiaa, T. C. Chong

نتاج البحث: المساهمة في مجلةArticleمراجعة النظراء

14 اقتباسات (Scopus)

ملخص

Achieving dense patterns with good resolution is a key step for several applications in micro- and nanoelectronics. Based on the mechanical strength and capillary forces between nanometer scale features, the authors have proposed that the use of thin resist is a solution to achieve dense array of patterns. Therefore, the authors have studied the effect of resist thickness on the resolution of dense patterns for both lines and dots. Based on the experimental results using hydrogen silsesquioxane resist, dense patterns with sub-10-nm half-pitch were achieved. The authors also propose a new method for calculating contrast for nanostructures.

اللغة الأصليةEnglish
الصفحات (من إلى)110351-110357
عدد الصفحات7
دوريةJournal of Vacuum Science and Technology B
مستوى الصوت29
رقم الإصدار1
المعرِّفات الرقمية للأشياء
حالة النشرPublished - يناير 2011
منشور خارجيًانعم

ASJC Scopus subject areas

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بصمة

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