TY - GEN
T1 - Parameter variation investigation of Magnetic Tunnel Junctions
AU - Kong, Jian Feng
AU - Eason, Kwaku
AU - Tan, Kim Piew
AU - Sbiaa, Rachid
PY - 2012
Y1 - 2012
N2 - Magnetic Tunnel Junction (MTJ) is a widely used spintronics structure in many applications. The tunneling magneto-resistance (TMR) is an important metric indicating MTJ sensitivity, and modeling this phenomenon is nontrivial, owing to the complicated nature of spin dependent tunneling. Deploying numerical tools such as OOMMF and SpinFlow3D software, which treats tunneling by way of a voltage-dependent areal conductance, we study properties of MTJs, such as TMR, varying a number of parameters, including MTJ stack taper angle, parameters of voltage-dependent areal conductance associated with the MgO barrier, and other parameters accessible in the model, including bias and coercive field behavior based on geometrical parameters. We find that a taper angle, which is a consequence of fabrication processes, has negligible effect on TMR. Additionally, it is shown that the current distributions in MTJs, when a bias voltage is applied, is actually nonuniform. We also show that introducing geometrical artifacts in the structure can strongly influence properties such as coercive and bias fields in MTJs.
AB - Magnetic Tunnel Junction (MTJ) is a widely used spintronics structure in many applications. The tunneling magneto-resistance (TMR) is an important metric indicating MTJ sensitivity, and modeling this phenomenon is nontrivial, owing to the complicated nature of spin dependent tunneling. Deploying numerical tools such as OOMMF and SpinFlow3D software, which treats tunneling by way of a voltage-dependent areal conductance, we study properties of MTJs, such as TMR, varying a number of parameters, including MTJ stack taper angle, parameters of voltage-dependent areal conductance associated with the MgO barrier, and other parameters accessible in the model, including bias and coercive field behavior based on geometrical parameters. We find that a taper angle, which is a consequence of fabrication processes, has negligible effect on TMR. Additionally, it is shown that the current distributions in MTJs, when a bias voltage is applied, is actually nonuniform. We also show that introducing geometrical artifacts in the structure can strongly influence properties such as coercive and bias fields in MTJs.
KW - areal conductance
KW - magnetic tunnel junctions
KW - micromagnetics
UR - http://www.scopus.com/inward/record.url?scp=84873145934&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84873145934&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84873145934
SN - 9789810720568
T3 - 2012 Digest APMRC - Asia-Pacific Magnetic Recording Conference: A Strong Tradition. An Exciting New Look!
BT - 2012 Digest APMRC - Asia-Pacific Magnetic Recording Conference
T2 - 2012 Asia-Pacific Magnetic Recording Conference: A Strong Tradition. An Exciting New Look!, APMRC 2012
Y2 - 31 October 2012 through 2 November 2012
ER -