TY - GEN
T1 - Optical, topographical, and compositional characterization of PtSi/Si Schottky diodes
AU - McCafferty, Patrick G.
AU - Sellai, Azzouz
AU - Dawson, Paul
PY - 1994
Y1 - 1994
N2 - Surface plasmons polaritons (SPPs) may be supported on the surface of PtSi electrodes in PtSi/Si Schottky barrier diodes. Using a prism-air gap-PtSi/p-Si or Otto coupling configuration we have excited SPPs at temperatures below 120 K on these devices. Changes in the dip in reflectance associated with SP excitation indicates changes in the PtSi optical data as a function of temperature. However it is important to understand what the optical data describe. In general they incorporate a surface roughness layer and are not truly characteristic of the material (PtSi) itself. In this context AFM analysis of the surface topography is presented. In addition the compositional structure of the PtSi as determined from Rutherford Backscattering Spectroscopy is discussed.
AB - Surface plasmons polaritons (SPPs) may be supported on the surface of PtSi electrodes in PtSi/Si Schottky barrier diodes. Using a prism-air gap-PtSi/p-Si or Otto coupling configuration we have excited SPPs at temperatures below 120 K on these devices. Changes in the dip in reflectance associated with SP excitation indicates changes in the PtSi optical data as a function of temperature. However it is important to understand what the optical data describe. In general they incorporate a surface roughness layer and are not truly characteristic of the material (PtSi) itself. In this context AFM analysis of the surface topography is presented. In addition the compositional structure of the PtSi as determined from Rutherford Backscattering Spectroscopy is discussed.
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U2 - 10.1117/12.189249
DO - 10.1117/12.189249
M3 - Conference contribution
AN - SCOPUS:0028758174
SN - 0819415987
SN - 9780819415981
T3 - Proceedings of SPIE - The International Society for Optical Engineering
SP - 55
EP - 63
BT - Proceedings of SPIE - The International Society for Optical Engineering
PB - Society of Photo-Optical Instrumentation Engineers
T2 - Infrared Detectors: State of the Art II
Y2 - 24 July 1994 through 25 July 1994
ER -