NOT GATE REALIZATION USING GAN HEMT GRADED CHANNEL TECHNOLOGY

نتاج البحثمراجعة النظراء

ملخص

There are various types of semiconductor materials such as Germanium (Ge), Silicon (S), Gallium Arsenide (GaAs), Silicon Carbide (SiC), Gallium Nitride (GaN) and Gallium Phosphide (GaP). In recent years, the GaN has gained a popularity amongst the other semiconductor materials, which is widely used in the fabrication of advanced electronic and power switching devices. With added attributes of High Electron Mobility Transistor (HEMT) with GaN, the device, which utilizes an unusual property of a very narrow channel enabling it to operate at exceedingly high frequencies with provision of a very attractive low noise performance.
Through this paper, we want to demonstrate the results of a simulation experiment carried out on GaN HEMT Graded Channel based NOT gate realization. The Graded Channel HEMT based realized NOT gate exhibits lower rise and fall times along with less propagation delay. A low gate charge, zero reverse recovery and flat output capacitance, all of which yield a high-quality switching performance, higher energy efficiency, new possible topologies with lower manufacturing cost. The GaN HEMT Graded Channel based logic gates realization will be quite promising for Embedded Vision System (EVS) circuits at the time of global semiconductor shortage.

pp. 279-284
IKSAD Global - 2022©
Release date: 06.07.2022
ISBN – 978-625-8323-42-9
اللغة الأصليةEnglish
الصفحات279-284
عدد الصفحات6
حالة النشرPublished - يوليو 6 2022
الحدثINTERNATIONAL CONGRESS ON SOCIAL SCIENCES,
CHINA TO ADRIATIC-XIV
- Kayseri
المدة: يونيو ١٠ ٢٠٢٢يونيو ١٢ ٢٠٢٢
رقم المؤتمر: IX

Conference

ConferenceINTERNATIONAL CONGRESS ON SOCIAL SCIENCES,
CHINA TO ADRIATIC-XIV
الدولة/الإقليمTurkey
المدينةKayseri
المدة٦/١٠/٢٢٦/١٢/٢٢

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