TY - GEN
T1 - Multi-bit per cell magnetic random access memory based on spin torque oscillator
AU - Sbiaa, Rachid
N1 - Publisher Copyright:
© 2017 Author(s).
PY - 2017/9/26
Y1 - 2017/9/26
N2 - Magnetization dynamics of a soft magnetic layer with perpendicular anisotropy under spin transfer torque from two adjacent layers is investigated. One of these two spin polarized layers has its magnetization fixed while the second one has its magnetization oscillating at a frequency f. It is observed that the soft layer magnetization could switch only for a range of frequency around an optimal value fo. The value of fo is strongly dependent on the intrinsic properties of the soft layer and the applied electric current. This scheme could solve the problem of overwritability in multi-bit per cell magnetic random access memory and bring momentum to research in magnetic memory for high storage capacity.
AB - Magnetization dynamics of a soft magnetic layer with perpendicular anisotropy under spin transfer torque from two adjacent layers is investigated. One of these two spin polarized layers has its magnetization fixed while the second one has its magnetization oscillating at a frequency f. It is observed that the soft layer magnetization could switch only for a range of frequency around an optimal value fo. The value of fo is strongly dependent on the intrinsic properties of the soft layer and the applied electric current. This scheme could solve the problem of overwritability in multi-bit per cell magnetic random access memory and bring momentum to research in magnetic memory for high storage capacity.
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U2 - 10.1063/1.5002468
DO - 10.1063/1.5002468
M3 - Conference contribution
AN - SCOPUS:85030683140
T3 - AIP Conference Proceedings
BT - 3rd Electronic and Green Materials International Conference 2017, EGM 2017
A2 - Ghazli, Mohd Fathullah
A2 - Ismail, Rizalafande Che
A2 - Abdullah, Mohd. Mustafa Albakri
A2 - Ramli, Muhammad Mahyiddin
A2 - Rahim, Shayfull Zamree Abd
A2 - Isa, Siti Salwa Mat
A2 - Saad, Mohd Nasir Mat
PB - American Institute of Physics Inc.
T2 - 3rd Electronic and Green Materials International Conference 2017, EGM 2017
Y2 - 29 April 2017 through 30 April 2017
ER -