TY - JOUR
T1 - Modeling the effect of deep traps on the capacitance-voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates
AU - Sengouga, Nouredine
AU - Boumaraf, Rami
AU - Mari, Riaz H.
AU - Meftah, Afak
AU - Jameel, Dler
AU - Al Saqri, Noor
AU - Azziz, Mohsin
AU - Taylor, David
AU - Henini, Mohamed
N1 - Publisher Copyright:
© 2015 Elsevier Ltd. All rights reserved.
PY - 2015/8/1
Y1 - 2015/8/1
N2 - Abstract Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance-voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance-voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance-voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.
AB - Abstract Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance-voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance-voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance-voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.
KW - High index GaAs
KW - Negative differential capacitance: deep levels
KW - SILVACO simulation
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U2 - 10.1016/j.mssp.2015.03.043
DO - 10.1016/j.mssp.2015.03.043
M3 - Article
AN - SCOPUS:84927647896
SN - 1369-8001
VL - 36
SP - 156
EP - 161
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
ER -