Losses calculation for medium voltage PWM current source rectifiers using different semiconductor devices

Ahmed K. Abdelsalam, Mahmoud I. Masoud, Stephen J. Finney, Barry W. Williams

نتاج البحث

2 اقتباسات (Scopus)

ملخص

In this paper, a comparison of losses and size for three semiconductor devices suitable for medium voltage (2.4 kV, 3.3 kV and 6.6 kV) high power applications is presented. The comparison is made for medium voltage PWM current source rectifiers using a selective harmonic elimination technique. The devices compared are High Voltage Insulated Gate Bipolar Transistor (HVIGBT) and two types of hard-driven thyristors, namely, the Symmetrical Gate Commutated Thyristor (SGCT) and the Asymmetrical Gate Commutated Thyristor (AGCT). The study depends on practical devices, data sheets from well known semiconductor vendors, taking into account accurate discrimination between turn-off and recovery states.

اللغة الأصليةEnglish
عنوان منشور المضيفSPEEDAM 2008 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion
الصفحات1356-1362
عدد الصفحات7
المعرِّفات الرقمية للأشياء
حالة النشرPublished - 2008
الحدثSPEEDAM 2008 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion - Ischia
المدة: يونيو ١١ ٢٠٠٨يونيو ١٣ ٢٠٠٨

سلسلة المنشورات

الاسمSPEEDAM 2008 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion

Other

OtherSPEEDAM 2008 - International Symposium on Power Electronics, Electrical Drives, Automation and Motion
الدولة/الإقليمItaly
المدينةIschia
المدة٦/١١/٠٨٦/١٣/٠٨

ASJC Scopus subject areas

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