Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique

Noor Alhuda Al Saqri, Jorlandio F. Felix, Mohsin Aziz, Vasyl P. Kunets, Dler Jameel, David Taylor, Mohamed Henini, Mahmmoud S. Abd El-Sadek, Colin Furrow, Morgan E. Ware, Mourad Benamara, Mansour Mortazavi, Gregory Salamo

نتاج البحث: المساهمة في مجلةArticleمراجعة النظراء

11 اقتباسات (Scopus)

ملخص

InGaAs quantum wire (QWr) intermediate-band solar cell-based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current-voltage (I-V) and capacitance-voltage (C-V) techniques, were found to change with temperature over a wide range of 20-340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the traps detected in the QWr-doped devices are directly or indirectly related to the insertion of the Si δ-layer used to dope the wires. In addition, in the QWr-doped devices, the decrease of the solar conversion efficiencies at low temperatures and the associated decrease of the integrated external quantum efficiency through InGaAs could be attributed to detected traps E1QWR-D, E2QWR-D, and E3QWR-D with activation energies of 0.0037, 0.0053, and 0.041 eV, respectively.

اللغة الأصليةEnglish
رقم المقال045707
دوريةNanotechnology
مستوى الصوت28
رقم الإصدار4
المعرِّفات الرقمية للأشياء
حالة النشرPublished - يناير 27 2017

ASJC Scopus subject areas

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