TY - JOUR
T1 - High speed in spin-torque-based magnetic memory using magnetic nanocontacts
AU - Sbiaa, R.
AU - Piramanayagam, S. N.
AU - Liew, T.
PY - 2013/5
Y1 - 2013/5
N2 - Magnetization switching by a spin-polarized current in perpendicular anisotropy devices with magnetic nanocontact (NC) is investigated using a micromagnetic formalism. The critical switching current (icr) and switching time (τ0) can be reduced when a soft layer is exchange coupled to the NC. The study reveals that devices with fewer NCs have smaller icr compared to those with a large number. Furthermore, τ0 for nanoconstricted devices is almost constant with anisotropy field (Hk), in contrast to devices without NCs that show an exponential increase with Hk. This suggests that nanoconstricted devices could be used to improve thermal stability, while reducing icr and τ0.
AB - Magnetization switching by a spin-polarized current in perpendicular anisotropy devices with magnetic nanocontact (NC) is investigated using a micromagnetic formalism. The critical switching current (icr) and switching time (τ0) can be reduced when a soft layer is exchange coupled to the NC. The study reveals that devices with fewer NCs have smaller icr compared to those with a large number. Furthermore, τ0 for nanoconstricted devices is almost constant with anisotropy field (Hk), in contrast to devices without NCs that show an exponential increase with Hk. This suggests that nanoconstricted devices could be used to improve thermal stability, while reducing icr and τ0.
KW - MRAM
KW - Magnetic anisotropy
KW - Magnetic random access memory
KW - Magnetization reversal
KW - Spin torque
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U2 - 10.1002/pssr.201307019
DO - 10.1002/pssr.201307019
M3 - Article
AN - SCOPUS:84877918771
SN - 1862-6254
VL - 7
SP - 332
EP - 335
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 5
ER -