The development of an one-step dry etching method for fabricating silicon carbide (SiC) microelectromechanical systems was analyzed. The objective of the method was to fabricate suspended SiC cantlever and clamped bridge structures by inductively coupled plasma (ICP). The presence of tensile stress in bridge structures was observed with the help of measured resonant frequencies. But, the cantlever beams were found stress-free. The bridge length was unable to influence the degree of the tension in the bridge structures.
|الصفحات (من إلى)||2998-3001|
|دورية||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|المعرِّفات الرقمية للأشياء|
|حالة النشر||Published - 2003|
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