Fabrication of SiC microelectromechanical systems using one-step dry etching

Liudi Jiang*, R. Cheung, M. Hassan, A. J. Harris, J. S. Burdess, C. A. Zorman, M. Mehregany

*المؤلف المقابل لهذا العمل

نتاج البحث: المساهمة في مجلةمراجعة النظراء

40 اقتباسات (Scopus)

ملخص

The development of an one-step dry etching method for fabricating silicon carbide (SiC) microelectromechanical systems was analyzed. The objective of the method was to fabricate suspended SiC cantlever and clamped bridge structures by inductively coupled plasma (ICP). The presence of tensile stress in bridge structures was observed with the help of measured resonant frequencies. But, the cantlever beams were found stress-free. The bridge length was unable to influence the degree of the tension in the bridge structures.

اللغة الأصليةEnglish
الصفحات (من إلى)2998-3001
عدد الصفحات4
دوريةJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
مستوى الصوت21
رقم الإصدار6
المعرِّفات الرقمية للأشياء
حالة النشرPublished - 2003
منشور خارجيًانعم

ASJC Scopus subject areas

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