ملخص
β-SiCNWs were synthesized by simple carbo-thermal process using silicon wafer and carbon powder only. The obtained β-SiCNWs were short and thick with random distribution over Si wafer surface when rapid heating rate is applied. While β-SiCNWs fabricated under low heating rate are 57.0±3.0 nm in average diameter and few millimeters in length. An ambient Ar gas flow rates were found to be critical in the growth yield of resultant β-SiC nanowires. XRD diffraction patterns and FTIR spectrum reveals the composition structure of theses wires.
اللغة الأصلية | English |
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رقم المقال | 02001 |
دورية | Journal of Nano- and Electronic Physics |
مستوى الصوت | 8 |
رقم الإصدار | 2 |
المعرِّفات الرقمية للأشياء | |
حالة النشر | Published - 2016 |
ASJC Scopus subject areas
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