Erratum: Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy (Journal of Nanophotonics (2012) 6)

Azzouz Sellai; Piotr Kruszewski; Abdelmadjid Mesli; Anthony R. Peaker; Mohamed Missous

doi:10.1117/1.JNP.6.060103

Erratum: Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy (Journal of Nanophotonics (2012) 6)

Azzouz Sellai^*, Piotr Kruszewski, Abdelmadjid Mesli, Anthony R. Peaker, Mohamed Missous

^*المؤلف المقابل لهذا العمل

Physics

نتاج البحث: المساهمة في مجلة › Comment/debate › مراجعة النظراء

اللغة الأصلية	English
رقم المقال	060103
دورية	Journal of Nanophotonics
مستوى الصوت	6
رقم الإصدار	1
المعرِّفات الرقمية للأشياء	https://doi.org/10.1117/1.JNP.6.060103
حالة النشر	Published - 2012

ASJC Scopus subject areas

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???subjectarea.asjc.3100.3104???

الوصول إلى المستند

10.1117/1.JNP.6.060103

الملفات والروابط الأخرى

قم بذكر هذا

Erratum: Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy (Journal of Nanophotonics (2012) 6). / Sellai, Azzouz; Kruszewski, Piotr; Mesli, Abdelmadjid وآخرون.
في: Journal of Nanophotonics, المجلد 6, رقم 1, 060103, 2012.

نتاج البحث: المساهمة في مجلة › Comment/debate › مراجعة النظراء

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