Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures

M. Al Huwayz; D. A. Jameel; S. Alotaibi; S. Alhassan; A. Almalki; N. Al Saqri; Yahya  Al Saleh; A. Alhassni; A. Almunyif; O. M. Lemine; A. Salhi; M. Henini

doi:10.1007/s00339-023-06626-w

Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures

M. Al Huwayz, D. A. Jameel^*, S. Alotaibi, S. Alhassan, A. Almalki, N. Al Saqri, Yahya Al Saleh, A. Alhassni, A. Almunyif, O. M. Lemine, A. Salhi, M. Henini

^*المؤلف المقابل لهذا العمل

Physics

نتاج البحث: المساهمة في مجلة › Article › مراجعة النظراء

1 اقتباس (Scopus)

ملخص

In this work, the effects of the substrate material on the electrical properties of self-assembled InAs quantum dots (QDs)-based laser structures have been reported. Two InAs QD laser structures with the same active regions deposited on GaAs and Si substrates utilizing strain reducing layer (SRL) containing GaAs/InGaAs have been investigated using current–voltage (I–V), capacitance–voltage, and Deep-Level Transient Spectroscopy (DLTS) techniques. The I–V measurements illustrated that the rectification ratio (I _F/I _R) and built-in potential (ϕ_B) for the sample deposited on Si substrate are higher than that of sample deposited on GaAs substrate. However, the series resistance (Rs) of the InAs QDs deposited on Si substrate is lower than that of the InAs QDs deposited on GaAs substrate. The DLTS and Laplace-DLTS measurements showed that the number of traps in InAs QDs/GaAs devices is lower than that in InAs QDs/Si devices, corroborating with I–V results.

اللغة الأصلية	English
رقم المقال	405
دورية	Applied Physics A: Materials Science and Processing
مستوى الصوت	129
رقم الإصدار	6
المعرِّفات الرقمية للأشياء	https://doi.org/10.1007/s00339-023-06626-w
حالة النشر	Published - مايو 10 2023

ASJC Scopus subject areas

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الوصول إلى المستند

10.1007/s00339-023-06626-w

الملفات والروابط الأخرى

قم بذكر هذا

Al Huwayz, M., Jameel, D. A., Alotaibi, S., Alhassan, S., Almalki, A., Al Saqri, N., Al Saleh, Y., Alhassni, A., Almunyif, A., Lemine, O. M., Salhi, A., & Henini, M. (2023). Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures. Applied Physics A: Materials Science and Processing, 129(6), المقال 405. https://doi.org/10.1007/s00339-023-06626-w

Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures. / Al Huwayz, M.; Jameel, D. A.; Alotaibi, S. وآخرون.
في: Applied Physics A: Materials Science and Processing, المجلد 129, رقم 6, 405, ١٠.٠٥.٢٠٢٣.

نتاج البحث: المساهمة في مجلة › Article › مراجعة النظراء

Al Huwayz, M, Jameel, DA, Alotaibi, S, Alhassan, S, Almalki, A, Al Saqri, N , Al Saleh, Y, Alhassni, A, Almunyif, A, Lemine, OM, Salhi, A & Henini, M 2023, 'Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures', Applied Physics A: Materials Science and Processing, المجلد 129, رقم 6, 405. https://doi.org/10.1007/s00339-023-06626-w

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title = "Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures",

abstract = "In this work, the effects of the substrate material on the electrical properties of self-assembled InAs quantum dots (QDs)-based laser structures have been reported. Two InAs QD laser structures with the same active regions deposited on GaAs and Si substrates utilizing strain reducing layer (SRL) containing GaAs/InGaAs have been investigated using current–voltage (I–V), capacitance–voltage, and Deep-Level Transient Spectroscopy (DLTS) techniques. The I–V measurements illustrated that the rectification ratio (I F/I R) and built-in potential (ϕB) for the sample deposited on Si substrate are higher than that of sample deposited on GaAs substrate. However, the series resistance (Rs) of the InAs QDs deposited on Si substrate is lower than that of the InAs QDs deposited on GaAs substrate. The DLTS and Laplace-DLTS measurements showed that the number of traps in InAs QDs/GaAs devices is lower than that in InAs QDs/Si devices, corroborating with I–V results.",

keywords = "C–V, DLTS, GaAs, InAs quantum dots (QDs), I–V, Si",

author = "{Al Huwayz}, M. and Jameel, {D. A.} and S. Alotaibi and S. Alhassan and A. Almalki and {Al Saqri}, N. and {Al Saleh}, Yahya and A. Alhassni and A. Almunyif and Lemine, {O. M.} and A. Salhi and M. Henini",

note = "Funding Information: M. Al Huwayz would like to acknowledge the support of “the National Plan for Sciences, Technology and Innovation (MAARIFAH)-King Abdulaziz City for Sciences and Technology (KACST)-Kingdom of Saudi Arabia Award Number: 14-NAN65-08. N. Al Saqri and Y. Al Saleh are thankful for the financial support by Sultan Qaboos University internal grant project IG/SCI/PHYS/20/01. Publisher Copyright: {\textcopyright} 2023, The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature.",

year = "2023",

month = may,

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doi = "10.1007/s00339-023-06626-w",

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T1 - Effects of substrate material on the electrical properties of self-assembled InAs quantum dots-based laser structures

AU - Al Huwayz, M.

AU - Jameel, D. A.

AU - Alotaibi, S.

AU - Alhassan, S.

AU - Almalki, A.

AU - Al Saqri, N.

AU - Al Saleh, Yahya

AU - Alhassni, A.

AU - Almunyif, A.

AU - Lemine, O. M.

AU - Salhi, A.

AU - Henini, M.

N1 - Funding Information: M. Al Huwayz would like to acknowledge the support of “the National Plan for Sciences, Technology and Innovation (MAARIFAH)-King Abdulaziz City for Sciences and Technology (KACST)-Kingdom of Saudi Arabia Award Number: 14-NAN65-08. N. Al Saqri and Y. Al Saleh are thankful for the financial support by Sultan Qaboos University internal grant project IG/SCI/PHYS/20/01. Publisher Copyright: © 2023, The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature.

PY - 2023/5/10

Y1 - 2023/5/10

N2 - In this work, the effects of the substrate material on the electrical properties of self-assembled InAs quantum dots (QDs)-based laser structures have been reported. Two InAs QD laser structures with the same active regions deposited on GaAs and Si substrates utilizing strain reducing layer (SRL) containing GaAs/InGaAs have been investigated using current–voltage (I–V), capacitance–voltage, and Deep-Level Transient Spectroscopy (DLTS) techniques. The I–V measurements illustrated that the rectification ratio (I F/I R) and built-in potential (ϕB) for the sample deposited on Si substrate are higher than that of sample deposited on GaAs substrate. However, the series resistance (Rs) of the InAs QDs deposited on Si substrate is lower than that of the InAs QDs deposited on GaAs substrate. The DLTS and Laplace-DLTS measurements showed that the number of traps in InAs QDs/GaAs devices is lower than that in InAs QDs/Si devices, corroborating with I–V results.

AB - In this work, the effects of the substrate material on the electrical properties of self-assembled InAs quantum dots (QDs)-based laser structures have been reported. Two InAs QD laser structures with the same active regions deposited on GaAs and Si substrates utilizing strain reducing layer (SRL) containing GaAs/InGaAs have been investigated using current–voltage (I–V), capacitance–voltage, and Deep-Level Transient Spectroscopy (DLTS) techniques. The I–V measurements illustrated that the rectification ratio (I F/I R) and built-in potential (ϕB) for the sample deposited on Si substrate are higher than that of sample deposited on GaAs substrate. However, the series resistance (Rs) of the InAs QDs deposited on Si substrate is lower than that of the InAs QDs deposited on GaAs substrate. The DLTS and Laplace-DLTS measurements showed that the number of traps in InAs QDs/GaAs devices is lower than that in InAs QDs/Si devices, corroborating with I–V results.

KW - C–V

KW - DLTS

KW - GaAs

KW - InAs quantum dots (QDs)

KW - I–V

KW - Si

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