Double-Barrier Resonant Tunnelling Diode Three-State Logic

A. Sellai; M. S. Raven; D. P. Steenson; J. M. Chamberlain; M. Henini; O. H. Hughes

doi:10.1049/el:19900040

Double-Barrier Resonant Tunnelling Diode Three-State Logic

A. Sellai, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

نتاج البحث: المساهمة في مجلة › Article › مراجعة النظراء

7 اقتباسات (Scopus)

ملخص

Primary three-state logic circuits (inverters, OR gates and flip-flops) have been produced using double-barrier GaAs/AlGaAs resonant tunnelling diodes. Circuit details, waveforms and three-state logic operations are described.

اللغة الأصلية	English
الصفحات (من إلى)	61-62
عدد الصفحات	2
دورية	Electronics Letters
مستوى الصوت	26
رقم الإصدار	1
المعرِّفات الرقمية للأشياء	https://doi.org/10.1049/el:19900040
حالة النشر	Published - 1990
منشور خارجيًا	نعم

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10.1049/el:19900040

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title = "Double-Barrier Resonant Tunnelling Diode Three-State Logic",

abstract = "Primary three-state logic circuits (inverters, OR gates and flip-flops) have been produced using double-barrier GaAs/AlGaAs resonant tunnelling diodes. Circuit details, waveforms and three-state logic operations are described.",

keywords = "Logic circuits, Logic devices, Multivalued logic, Resonant tunnelling, Semiconductor devices and materials, Superlattices, Tunnel diodes",

author = "A. Sellai and Raven, {M. S.} and Steenson, {D. P.} and Chamberlain, {J. M.} and M. Henini and Hughes, {O. H.}",

year = "1990",

doi = "10.1049/el:19900040",

language = "English",

volume = "26",

pages = "61--62",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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TY - JOUR

T1 - Double-Barrier Resonant Tunnelling Diode Three-State Logic

AU - Sellai, A.

AU - Raven, M. S.

AU - Steenson, D. P.

AU - Chamberlain, J. M.

AU - Henini, M.

AU - Hughes, O. H.

PY - 1990

Y1 - 1990

N2 - Primary three-state logic circuits (inverters, OR gates and flip-flops) have been produced using double-barrier GaAs/AlGaAs resonant tunnelling diodes. Circuit details, waveforms and three-state logic operations are described.

AB - Primary three-state logic circuits (inverters, OR gates and flip-flops) have been produced using double-barrier GaAs/AlGaAs resonant tunnelling diodes. Circuit details, waveforms and three-state logic operations are described.

KW - Logic circuits

KW - Logic devices

KW - Multivalued logic

KW - Resonant tunnelling

KW - Semiconductor devices and materials

KW - Superlattices

KW - Tunnel diodes

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U2 - 10.1049/el:19900040

DO - 10.1049/el:19900040

M3 - Article

AN - SCOPUS:0025699571

SN - 0013-5194

VL - 26

SP - 61

EP - 62

JO - Electronics Letters

JF - Electronics Letters

IS - 1

ER -

Double-Barrier Resonant Tunnelling Diode Three-State Logic

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