Domain Wall Dynamics in Stepped Magnetic Nanowire with Perpendicular Magnetic Anisotropy

Suleiman Al Risi, Rachid Sbiaa*, Mohammed Al Bahri

*المؤلف المقابل لهذا العمل

نتاج البحث: المساهمة في مجلةArticleمراجعة النظراء

4 اقتباسات (Scopus)


Micromagnetic simulation is carried out to investigate the current-driven domain wall (DW) in a nanowire with perpendicular magnetic anisotropy. A stepped nanowire is proposed to pin DW and achieve high information storage capacity based on multibit per cell scheme. The DW speed is found to increase for thicker and narrower nanowires. For depinning DW from the stepped region, the current density Jdep is investigated with emphasis on device geometry and material intrinsic properties. The Jdep can be analytically determined as a function of the nanoconstriction dimension and the thickness of the nanowire. Furthermore, Jdep is found to exponential dependent on the anisotropy energy and saturation magnetization, offering thus more flexibility in adjusting the writing current for memory applications.

اللغة الأصليةEnglish
رقم المقال2000225
دوريةPhysica Status Solidi (A) Applications and Materials Science
مستوى الصوت217
رقم الإصدار16
المعرِّفات الرقمية للأشياء
حالة النشرPublished - أغسطس 1 2020
منشور خارجيًانعم

ASJC Scopus subject areas

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