Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

Nazek El-Atab; Samar Alqatari; Feyza B. Oruc; Tewfic Souier; Matteo Chiesa; Ali K. Okyay; Ammar Nayfeh

doi:10.1063/1.4826583

Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

Nazek El-Atab, Samar Alqatari, Feyza B. Oruc, Tewfic Souier, Matteo Chiesa, Ali K. Okyay, Ammar Nayfeh

نتاج البحث: المساهمة في مجلة › Article › مراجعة النظراء

37 اقتباسات (Scopus)

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A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (V_ON) ∼3.5 V. The measured breakdown voltage (V_BR) and electric field (E_BR) for this diode are 5.4 V and 3.86 MV/cm, respectively.

اللغة الأصلية	English
رقم المقال	102119
دورية	AIP Advances
مستوى الصوت	3
رقم الإصدار	10
المعرِّفات الرقمية للأشياء	https://doi.org/10.1063/1.4826583
حالة النشر	Published - أكتوبر 2013
منشور خارجيًا	نعم

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10.1063/1.4826583

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title = "Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon",

abstract = "A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively.",

author = "Nazek El-Atab and Samar Alqatari and Oruc, {Feyza B.} and Tewfic Souier and Matteo Chiesa and Okyay, {Ali K.} and Ammar Nayfeh",

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doi = "10.1063/1.4826583",

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T1 - Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

AU - El-Atab, Nazek

AU - Alqatari, Samar

AU - Oruc, Feyza B.

AU - Souier, Tewfic

AU - Chiesa, Matteo

AU - Okyay, Ali K.

AU - Nayfeh, Ammar

PY - 2013/10

Y1 - 2013/10

N2 - A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively.

AB - A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively.

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JF - AIP Advances

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Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

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