Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency

Muhammad Usman*, Tariq Jamil, Shahzeb Malik, Habibullah Jamal

*المؤلف المقابل لهذا العمل

نتاج البحث: المساهمة في مجلةArticleمراجعة النظراء

17 اقتباسات (Scopus)

ملخص

We have proposed and investigated a DUV LED device with anti-trapezoidal quaternary electron blocking layer (EBL) numerically. The simulation results show that the anti-trapezoidal quaternary EBL is a better approach for diminishing the electron overflow and boosting the hole into the active region. This improves radiative recombination, which is responsible for the significant enhancement in IQE and remarkable reduction in efficiency droop. The results reveal that the electron and hole concentration is increased by 19 % and 29 % respectively.

اللغة الأصليةEnglish
رقم المقال166528
دوريةOptik
مستوى الصوت232
المعرِّفات الرقمية للأشياء
حالة النشرPublished - أبريل 2021
منشور خارجيًانعم

ASJC Scopus subject areas

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بصمة

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