ملخص
We have proposed and investigated a DUV LED device with anti-trapezoidal quaternary electron blocking layer (EBL) numerically. The simulation results show that the anti-trapezoidal quaternary EBL is a better approach for diminishing the electron overflow and boosting the hole into the active region. This improves radiative recombination, which is responsible for the significant enhancement in IQE and remarkable reduction in efficiency droop. The results reveal that the electron and hole concentration is increased by 19 % and 29 % respectively.
اللغة الأصلية | English |
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رقم المقال | 166528 |
دورية | Optik |
مستوى الصوت | 232 |
المعرِّفات الرقمية للأشياء | |
حالة النشر | Published - أبريل 2021 |
منشور خارجيًا | نعم |
ASJC Scopus subject areas
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