Chemical Vapor Deposition Growth of Composite Silicon-Silica Nanowires from Silicon Monoxide Vapor

Tariq Mohiuddin, Majid S. Al-Ruqeishi*

*المؤلف المقابل لهذا العمل

نتاج البحث: المساهمة في مجلةمراجعة النظراء

1 اقتباس (Scopus)

ملخص

Si/SiO2 nanowires were synthesized directly by and on silicon substrate surface without the use of a metal catalyst. Since these nanowires grow directly from the silicon substrate, they do not need to be manipulated or aligned for subsequent applications. The obtained nanowires are amorphous with diameters ranging between 50 to 200 nm and few micrometers in length. Parameters like heating temperature, deposition time, and carrier gas flow-rate were found critical in determining the size, structure, growth yield and morphology of the obtained nanowires. FTIR absorption spectra showed high intensity Si–O asymmetric stretching mode and no absorption for Si-Si backbone vibration mode at 620 cm−1which indicates the non-crystalline nature of grown wires.

اللغة الأصليةEnglish
الصفحات (من إلى)225-231
عدد الصفحات7
دوريةSilicon
مستوى الصوت8
رقم الإصدار2
المعرِّفات الرقمية للأشياء
حالة النشرPublished - أبريل 1 2016

ASJC Scopus subject areas

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