Characteristics of interface states in irradiated Pd/n-SiGe as derived from frequency- and temperature-dependent admittance

A. Sellai*, M. Mamor

*المؤلف المقابل لهذا العمل

نتاج البحث

ملخص

We have used, in this contribution, the measured frequency-dependent ac admittance of irradiated Pd/n-GaN Schottky contacts at different temperatures ranging from 100K to 300K to derive the admittance associated with the displacement current in the Pd/GaN interfacial layer. The normalized conductance versus frequency plots at various temperatures, are characterized essentially by the presence of peaks, which is seen as a signature and a direct evidence for the presence of interface traps. The magnitudes and frequency positions of these peaks allowed the determination of the density and the energy distribution of interface traps as well as the thermal emission rates of carriers from traps and, hence, their capture cross-section.

اللغة الأصليةEnglish
عنوان منشور المضيف2012 16th IEEE Mediterranean Electrotechnical Conference, MELECON 2012
الصفحات622-625
عدد الصفحات4
المعرِّفات الرقمية للأشياء
حالة النشرPublished - 2012
الحدث2012 16th IEEE Mediterranean Electrotechnical Conference, MELECON 2012 - Yasmine Hammamet
المدة: مارس ٢٥ ٢٠١٢مارس ٢٨ ٢٠١٢

سلسلة المنشورات

الاسمProceedings of the Mediterranean Electrotechnical Conference - MELECON

Other

Other2012 16th IEEE Mediterranean Electrotechnical Conference, MELECON 2012
الدولة/الإقليمTunisia
المدينةYasmine Hammamet
المدة٣/٢٥/١٢٣/٢٨/١٢

ASJC Scopus subject areas

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بصمة

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