TY - GEN
T1 - Characteristics of interface states in irradiated Pd/n-SiGe as derived from frequency- and temperature-dependent admittance
AU - Sellai, A.
AU - Mamor, M.
PY - 2012
Y1 - 2012
N2 - We have used, in this contribution, the measured frequency-dependent ac admittance of irradiated Pd/n-GaN Schottky contacts at different temperatures ranging from 100K to 300K to derive the admittance associated with the displacement current in the Pd/GaN interfacial layer. The normalized conductance versus frequency plots at various temperatures, are characterized essentially by the presence of peaks, which is seen as a signature and a direct evidence for the presence of interface traps. The magnitudes and frequency positions of these peaks allowed the determination of the density and the energy distribution of interface traps as well as the thermal emission rates of carriers from traps and, hence, their capture cross-section.
AB - We have used, in this contribution, the measured frequency-dependent ac admittance of irradiated Pd/n-GaN Schottky contacts at different temperatures ranging from 100K to 300K to derive the admittance associated with the displacement current in the Pd/GaN interfacial layer. The normalized conductance versus frequency plots at various temperatures, are characterized essentially by the presence of peaks, which is seen as a signature and a direct evidence for the presence of interface traps. The magnitudes and frequency positions of these peaks allowed the determination of the density and the energy distribution of interface traps as well as the thermal emission rates of carriers from traps and, hence, their capture cross-section.
KW - Admittance spectroscopy
KW - Interface States
KW - Schottky Contacts
UR - http://www.scopus.com/inward/record.url?scp=84861488120&partnerID=8YFLogxK
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U2 - 10.1109/MELCON.2012.6196508
DO - 10.1109/MELCON.2012.6196508
M3 - Conference contribution
AN - SCOPUS:84861488120
SN - 9781467307826
T3 - Proceedings of the Mediterranean Electrotechnical Conference - MELECON
SP - 622
EP - 625
BT - 2012 16th IEEE Mediterranean Electrotechnical Conference, MELECON 2012
T2 - 2012 16th IEEE Mediterranean Electrotechnical Conference, MELECON 2012
Y2 - 25 March 2012 through 28 March 2012
ER -