Barrier height variations and interface properties of PtSi/Si structures

A. Sellai*, P. Dawson

*المؤلف المقابل لهذا العمل

نتاج البحث: المساهمة في مجلةمراجعة النظراء

6 اقتباسات (Scopus)


To study some of the interfacial properties of PtSi/Si diodes, Schottky structures were fabricated on (100) crystalline silicon substrates by conventional thermal evaporation of Pt on Si followed by annealing at different temperatures (from 400°C to 700°C) to form PtSi. The PtSi/n-Si diodes, all yielded Schottky barrier (SB) heights that are remarkably temperature dependent. The temperature range (20-290 K) over which the I-V characteristics were measured in the present study is broader with a much lower limit (20K), than what is usually reported in literature. These variations in the barrier height are adequately interpreted by introducing spatial inhomogeneity into the barrier potential with a Gaussian distribution having a mean barrier of 0.76 eV and a standard deviation of 30 meV. Multi-frequency capacitance-voltage measurements suggest that the barrier is primarily controlled by the properties of the silicide-silicon interface. The forward C-V characteristics, in particular, show small peaks at low frequencies that can be ascribed to interface states rather than to a series resistance effect.

اللغة الأصليةEnglish
الصفحات (من إلى)273-278
عدد الصفحات6
دوريةSurface Review and Letters
مستوى الصوت13
رقم الإصدار2-3
المعرِّفات الرقمية للأشياء
حالة النشرPublished - 2006

ASJC Scopus subject areas

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  • ???subjectarea.asjc.3100.3110???
  • ???subjectarea.asjc.2500.2508???
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