TY - JOUR
T1 - Barrier characteristics of PtSi/p-Si Schottky diodes as determined from I-V-T measurements
AU - McCafferty, P. G.
AU - Sellai, A.
AU - Dawson, P.
AU - Elabd, H.
N1 - Funding Information:
Acknowledgements--This project was supported jointly by funding from the United Kingdom Science and Engineering Research Council (grant refs GR/G24255 and GR/K76078) and the Technology Board for Northern Ireland (grant ref. ST57 QUB). P.G.McC. would also like to acknowledge the support of a Co-operative Award in Science and Technology funded by the Department of Education for Northern Ireland and the Northern Telecom NITEC Centre, Northern Ireland, U.K.
PY - 1996/4
Y1 - 1996/4
N2 - The current-voltage-temperature characteristics of PtSi/p-Si Schottky barrier diodes were measured in the temperature range 60-115 K. Deviation of the ideality factor from unity below 80 K may be modelled using the so-called T0 parameter with T0 = 18 K. It is also shown that the curvature in the Richardson plots may be remedied by using the flatband rather than the zero-bias saturation current density. Physically, the departure from ideality is interpreted in terms of an inhomogeneous Schottky contact. Here we determine a mean barrier height at T = 0 K, Φ̄0 b = 223 mV, with an (assumed) Gaussian distribution of standard deviation σΦ, = 12.5 mV. These data are correlated with the zero-bias barrier height, Φ0 j = 192 mV (at T = 90 K), the photoresponse barrier height, Φph = 205 mV, and the flatband barrier height, Φfb = 214 mV. Finally, the temperature coefficient of the flatband barrier was found to be -0.121 mV K-1, which is approximately equal to 1/2(dEi g/dT), thus suggesting that the Fermi level at the interface is pinned to the middle of the band gap.
AB - The current-voltage-temperature characteristics of PtSi/p-Si Schottky barrier diodes were measured in the temperature range 60-115 K. Deviation of the ideality factor from unity below 80 K may be modelled using the so-called T0 parameter with T0 = 18 K. It is also shown that the curvature in the Richardson plots may be remedied by using the flatband rather than the zero-bias saturation current density. Physically, the departure from ideality is interpreted in terms of an inhomogeneous Schottky contact. Here we determine a mean barrier height at T = 0 K, Φ̄0 b = 223 mV, with an (assumed) Gaussian distribution of standard deviation σΦ, = 12.5 mV. These data are correlated with the zero-bias barrier height, Φ0 j = 192 mV (at T = 90 K), the photoresponse barrier height, Φph = 205 mV, and the flatband barrier height, Φfb = 214 mV. Finally, the temperature coefficient of the flatband barrier was found to be -0.121 mV K-1, which is approximately equal to 1/2(dEi g/dT), thus suggesting that the Fermi level at the interface is pinned to the middle of the band gap.
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U2 - 10.1016/0038-1101(95)00162-X
DO - 10.1016/0038-1101(95)00162-X
M3 - Article
AN - SCOPUS:0030129881
SN - 0038-1101
VL - 39
SP - 583
EP - 592
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 4 SPEC. ISS.
ER -