TY - JOUR
T1 - Analysis of deep level defects in GaN p-i-n diodes after beta particle irradiation
AU - Belahsene, Sofiane
AU - Saqri, Noor Alhuda Al
AU - Jameel, Dler
AU - Mesli, Abdelmadjid
AU - Martinez, Anthony
AU - Sanoit, Jacques De
AU - Ougazzaden, Abdallah
AU - Salvestrini, Jean Paul
AU - Ramdane, Abderrahim
AU - Henini, Mohamed
N1 - Publisher Copyright:
© 2015 by the authors; licensee MDPI, Basel, Switzerland.
PY - 2015/12/4
Y1 - 2015/12/4
N2 - The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 1014 to 3.6 × 1015 cm−3, together with one hole trap with energy depth of 0.83 eV and concentration of 8 × 1014 cm−3. It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction.
AB - The effect of beta particle irradiation (electron energy 0.54 MeV) on the electrical characteristics of GaN p-i-n diodes is investigated by current-voltage (I-V), capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements. The experimental studies show that, for the as-grown samples, three electron traps are found with activation energies ranging from 0.06 to 0.81 eV and concentrations ranging from 1.2 × 1014 to 3.6 × 1015 cm−3, together with one hole trap with energy depth of 0.83 eV and concentration of 8 × 1014 cm−3. It has been found that the irradiation has no effect on these intrinsic defects. The irradiation affected only a shallow donor level close to Ec [0.06 eV-0.18 eV] on the p-side of the p-i-n junction.
KW - Activation energy
KW - Beta irradiation
KW - Deep level transient spectroscopy (DLTS)
KW - GaN p-i-n diodes
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U2 - 10.3390/electronics4041090
DO - 10.3390/electronics4041090
M3 - Article
AN - SCOPUS:84958160453
SN - 2079-9292
VL - 4
SP - 1099
EP - 1100
JO - Electronics
JF - Electronics
IS - 4
ER -